Solar energy is a pure and reproducible energy. China has paid more consideration to the investigation employment of solar The focuses on phenomenon PID capability degradation inactivation mediums for instance alumina/silicon nitride in transparent silicon high-efficiency cells. Through laboratorial effect individual in-activation membrane processes damping behavior, it found that deposition ap...

The thickness of silicon dioxide that is used as the transistor gate dielectric in most advanced memory and logic applications has decreased below 7 nm. Unfortunately, the accuracy and reproducibility of metrology used to measure gate dielectric thickness during manufacture of integrated circuits remains in some dispute. In addition, detailed materials characterization studies have resulted in ...

Fluoride in spray pyrolysis precursor solutions for silicon-doped zinc oxide (SiZO) transparent conductor thin films significantly improves their electrical conductivity by enhancing silicon doping efficiency and not, as previously assumed, by fluoride doping. Containing only earth-abundant elements, SiZO thus prepared rivals the best solution-processed indium-doped ZnO in performance.

The results of the X-ray radiation impact on heterojunction SiGe and conventional silicon bipolar transistors are presented. Oxide thickness over the emitter-base junction depletion region determines the radiation hardness of the bipolar transistors. In this article, the estimation of the rate of radiation degradation of electrical parameters for conventional silicon devices and SiGe-transistor...

The formation of a nanoscale anodic silicon oxide layer on silicon electrodes in an aqueous environment leads to fluidic-based ionic memristive devices and ionic latches for large integrated fluidic ion logic circuitry, which can enable massively multiplexed smart biosensor arrays and complex active chemical circuits.

A breakthrough in graphene-oxide/silicon heterojunction solar cells is presented which edge-oxidized graphene and an in-plane charge transfer dopant (Nafion) are combined to form a high-quality passivating contact scheme. oxide (GO):Nafion ink developed advanced back-junction GO:Nafion/n-Si cell with high-power conversion efficiency (18.8%) large area (5.5 cm2) reported. This scalable solution-...

Traditional fibre-optic drawing involves a thermally mediated geometric scaling where both the fibre materials and their relative positions are identical to those found in the fibre preform. To date, all thermally drawn fibres are limited to the preform composition and geometry. Here, we fabricate a metre-long crystalline silicon-core, silica-cladded fibre from a preform that does not contain a...

Oxidation of silicon nanowires (Si NWs) is an undesirable phenomenon that has a detrimental effect on their electronic properties. To prevent oxidation of Si NWs, a deeper understanding of the oxidation reaction kinetics is necessary. In the current work, we study the oxidation kinetics of hydrogen-terminated Si NWs (H-Si NWs) as the starting surfaces for molecular functionalization of Si surfa...

Carbon films on the Si/SiO2 substrate are fabricated using modified method of close space sublimation at atmospheric pressure. The film properties have been characterized by micro-Raman and X-ray photoelectron spectroscopy and monochromatic ellipsometry methods. Ellipsometrical measurements demonstrated an increase of the silicon oxide film thickness in the course of manufacturing process. The ...