In this study, a three-dimensional “atomistic” circuitdevice coupled simulation approach is advanced to investigate the process-variation and random dopant induced characteristic fluctuations in planar metal-oxidesemiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) from 65-nm to 16-nm gate length. As the gate length of the planar MOSFETs scales from 65 nm to 16 nm, ...

The paper presents a simulation study of effect of interface fixed charges on the performance of the cylindrical nanowire MOSFET for different channel materials (Si, GaAs and Ge). The objective of the present work is to study the effect of hot carrier damage/stress induced damage/process damage/radiation damage induced fixed charges at the semiconductor-oxide interface of the cylindrical nanowi...

Models for analog circuit simulations must achieve good and continuous representation of current through the device over the complete range of modes of operation including saturation and weak, moderate and strong inversion. In addition the drain current and its derivatives must be continuous to avoid convergence problems and give proper description of the transconductance and output conductance...

A 0.8V second order ∆Σ modulator is designed in 0.18μm bulk CMOS technology. Dynamic threshold MOSFET (DTMOS) technique is used to enhance the performance of the circuit building blocks at very low supply voltage. Schematic and post layout simulation results are provided. In case of the amplifier with the embedded CMFB, the measurement results are presented. The modulator can achieve a SNR of a...

Wafer bonding techniques play a key role in the present day silicon bulk micromachining for MEMS based sensors and actuators. Various silicon wafer bonding techniques and their role on MEMS devices such as pressure sensors, accelerometers and micropump have been discussed. The results on the piezoresistive pressure sensors monolithically integrated with a MOSFET differential amplifier circuit h...

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

In this paper, a novel fully differential second-generation current conveyor (FDCCII) is presented. The proposed block is useful in mixed-mode applications where fully differential signal processing is required. Furthermore, the FDCCII can be used to realize MOSFET-C filters. The circuit has a bandwidth of about 10 MHz under heavy capacitive loads and can operate from low supply voltages down t...

A new compact physics-based Alpha-Power Law MOSFET Model is introduced to enable projections of low power circuit performance for future generations of technology by linking the simple mathematical expressions of the original Alpha-Power Law Model with their physical origins. The new model, verified by HSPICE simulations and measured data, includes: 1) a subthreshold region of operation for eva...

This paper describes a test setup for automatic characterization of MOS transistors mismatch. It is composed by a custom made test chip, a computer and measurement equipment. The chip aggregates analog switches, a programmable shift register and a reference circuit, as well as the matrix of 1296 transistors to be tested. It was already successfully integrated in 0.35 μm and 0.18 μm bulk technol...

Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are expected to become industry standards in ~2007. As devices are scaled down to these lengths, overlapand fringe-capacitance between the gate and source/drain regions gain more importance as a fraction of the total gate-capacitance. Therefore in numerical simulations of these structures it is necessary to carefully include ...