A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (10(15)) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off...

In this paper, a Junctionless Accumulation Mode Ferroelectric Field Effect Transistor (JAM-FE-FET) has been proposed and assessed in terms of RF/analog specifications for varied channel lengths through simulations using TCAD Silvaco ATLAS simulator, the Shockley-Read-Hall (SRH) recombination, ferro, Lombardi CVT, fermi LK models. Major analog metrics like transconductance (gm), intrinsic gain (...

This paper explores the potential advantage of surrounded gate junctionless graded channel (SJLGC) MOSFET in view its Analog, RF performances using ATLAS TCAD device simulator. The impact lateral direction on potential, electric field, and velocity carriers, energy band along is investigated systematically. present work mainly emphasises superior performance SJLGC by showing higher drain curren...