High indium content In0.86Al0.14As/In0.86Ga0.14As double heterojunction bipolar transistors (DHBTs) were grown on InP substrates using thin 6.0 Å metamorphic compositionally graded buffer layers. Good DC and RF characteristics have been demonstrated, with high gain (~30), breakdown voltage greater than 2.5 V, turn-on voltage reduction by a factor of two compared to existing InP bipolar technolo...

The mechanical deformation by spherical indentation of both crystalline InP and GaAs was characterized using cross-sectional transmission electron microscopy ~XTEM! and atomic force microscopy. All load–unload curves show a discontinuity ~or ‘‘pop in’’! during loading. Slip bands oriented along $111% planes are visible in XTEM micrographs from residual indentations in both materials and no evid...

For a certain heteroepitaxial system, the optical properties of self-assembled nanostructures basically depend on their size. In this work, we have studied different ways to modify the height of InAs/ InP quantum wires QWrs in order to change the photoluminescence emission wavelength. One procedure consists of changing the QWr size by varying the amount of InAs deposited. The other two methods ...

High quantum yield (47%) InP nanocrystals can be prepared without the need for post HF treatment by combining microwave methodologies with the presence of a fluorinated ionic liquid. Growing the InP nanocrystals in the presence of the ionic liquid 1-hexyl-3-methyl-imidazolium tetrafluoroborate (hmim BF4) allows in situ etching to be achieved. The optimization of the PL QY is achieved by balanci...

Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alig...

We present continuous wave laser emission in a photonic crystal microcavity operating at 1.5 microm at room temperature. The structures have been fabricated in an InP slab including a single layer of self-assembled InAs/InP quantum wires (QWrs) as active material. Laser emission in air suspended membranes with thresholds of effective optical pump power of 22 microW and quality factors up to 550...

ion. In Cobol, on the other hand, a selection must be made from Paragraph, Section and External Module because they are valid alternatives for implementing a functional component. The subset Inp represents input links between source software objects and decisions: Inp = { (s,d) | s ∈S ∧ d ∈D ∧ "s is input to d" } The subset Out represents output links between decisions and target software objec...

We have investigated the cross-sectional electric field and potential distribution of a cleaved n-InP/InGaAsP/p-InP p – i – n laser diode using Kelvin probe force microscopy ~KFM! with a lateral resolution reaching 50 nm. The powerful characterization capabilities of KFM were compared with two-dimensional ~2D! physics-based simulations. The agreement between simulations and KFM measurements reg...

The lasers on both Si and InP substrates were tested under an RT pulsed condition (300111 kHr). Fig. 3 shows the typical current/light (UL) characteristics ( 3 3 0 ~ cavity length) of a laser on Si. The threshold current density is estimated to be as low as 1.7 kAIcm’. Furthermore, dependence of the threshold current density (J,,,) on the reciprocal of cavity length (IIL) was investigated and p...

We report InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors (DHBTs) demonstrating simultaneous 460 GHz f and 850 GHz fmax. The devices were fabricated using a triple mesa process with dry-etched, refractory metals for emitter contact formation. The devices incorporate a 35 nm thick InP emitter which enables a wet etch emitter process demonstrating 220 nm wide emitter-base juncti...