نتایج جستجو برای: impact ionization
تعداد نتایج: 796390 فیلتر نتایج به سال:
This paper presents an innovative reliability bench specifically dedicated to high RF power device lifetime tests under pulse conditions for radar application. A base-station dedicated LDMOS transistor has been chosen for RF lifetests and a complete device electric characterization has been performed. A whole review of its critical electrical parameters after accelerated ageing tests is propose...
We demonstrate the use of bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice as the gain material in a separate absorption/multiplication avalanche photodiode with sensitivity up to 1.74 mm. Both gain schemes were implemented in a molecular-beam epitaxy grown structure with a selectively doped InAs/AlSb superlattice as the n-type layer. Hole impact ionization enhancement was observed in Al0.04Ga0.9...
The application of the box integration method in Technology CAD environments is investigated. A particular difficulty arises from physical models like the impact ionization rate or the high-field mobility within the drift-diffusion carrier transport equations which rely on vector quantities. We discuss different methods how generation rates can be approximated in the box scheme and how the requ...
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