نتایج جستجو برای: high k dielectric
تعداد نتایج: 2396257 فیلتر نتایج به سال:
A novel inorganic-organic hybrid supramolecular macrocyclic compound, (4-nitroanilinium) (18-crown-6)(PF6)(1), was synthesized and characterized by infrared spectroscopy, thermogravimetric analysis, elemental analysis, differential scanning calorimetry (DSC), and single-crystal X-ray diffraction. Crystal 1 is found to comprise 1D C–H···F–P hydrogen-bonded chains of (4-nitroanilinium+) (18-crown...
Introduction MOSFETs with a high-mobility channel are attractive candidates for advanced CMOS device structures, since it is becoming increasingly difficult to enhance Si CMOS performance through traditional device scaling. The lower effective mass and higher mobility of carriers in germanium (Ge) compared with silicon (Si) (2x higher mobility for electrons and 4x for holes) has prompted renewe...
Article history: Received 23 November 2009 Received in revised form 21 January 2010 Available online 1 March 2010 0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.01.045 * Corresponding author. E-mail address: [email protected] (Y.-K. Fang In this work, influences of oxygen effect on an Hf-based high-k gate dielectric were investigated. A post deposition anneali...
Abstract—The origin of negative flat-band shift using La2O3 incorporation in HfO2 dielectrics has been extensively examined. From careful extraction of effective work function of gate electrode and fixed charges at each interface, it has been revealed that La2O3 at high-k/Si substrate or high-k/SiO2 interface has either large amount of positive fixed charges or an additional dipole of 0.36 V co...
In this paper, we study the circuit performance issues of high-K gate dielectric MOSFETs using the Look-up Table (LUT) approach. The LUT approach is implemented in a public-domain circuit simulator SEQUEL. We observed an excellent match between LUT simulator and mixed mode simulations using MEDICI. This work clearly demonstrates the predictive power of the new simulator, as it enables evaluatio...
Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation Appl. The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750°C Comment on " Lifetime recovery in ultra-highly titanium-doped silicon for the implementation of an intermediate band material " [Appl. Deep ...
1. Introduction In spite of intensive efforts, still some serious items to be solved remain for high-k gate stack. By narrowing down the items, gate electrode has become one of the most problematic issues due to unavoidable Fermi level pinning [1]. In this talk, after a brief benchmarking of high-k gate stack technology, we lay particular stress on the impact on the electrical characteristics c...
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