نتایج جستجو برای: enhanced atomic layer deposition
تعداد نتایج: 767218 فیلتر نتایج به سال:
Makoto Shimizu 1,2,*, Hiroki Akutsu 1, Shinichiro Tsuda 1, Fumitada Iguchi 1 and Hiroo Yugami 1 1 Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan; [email protected] (H.A.); [email protected] (S.T.); [email protected] (F.I.); [email protected] (H.Y.) 2 Centre de Thermique de Lyon, Unité Mixte de Recherche 50...
Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO2 gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessedgate devices with SiO2 dielectrics are observed to exhibit simultaneous trappi...
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