Lee, Yi-Mu. Breakdown and reliability of CMOS devices with stacked oxide/nitride and oxynitride gate dielectrics prepared by RPECVD. (Under the direction of Professor Gerald Lucovsky) Remote-plasma-enhanced CVD (RPECVD) silicon nitride and silicon oxynitride alloys have been proposed to be the attractive alternatives to replace conventional oxides as the CMOS logic and memory technology node is...

Despite tremendous potential and urgent demand in high-response low-cost gas identification, the development of gas identification based on a metal oxide semiconductor nanowire/nanobelt remains limited by fabrication complexity and redundant signals. Researchers have shown a multisensor-array strategy with "one key to one lock" configuration. Here, we describe a new strategy to create high-resp...

We describe a microfluidic device with an integrated microwave heater specifically designed to dielectrically heat non-aqueous droplets using time-varying electrical fields with the frequency range between 700 and 900 MHz. The precise control of frequency, power, temperature and duration of the applied field opens up new vistas for experiments not attainable by conventional microwave heating. W...

We present the design, fabrication process and characterization of multilayer miniaturized polydimethylsiloxane (PDMS)-based dielectric elastomer diaphragm actuators. The conductive stretchable electrodes are obtained by lowenergy metal ion implantation. To increase force, decrease the required voltage, and avoid dielectric breakdown, we present here a technique to fabricate multilayer devices ...

LI, WENMEI. Characterization of High-κ Gate Stacks in Metal-Oxide-Semiconductor Capacitors. (Under the direction of Dr. Dennis M. Maher) The purpose of this research has been to use off-line characterization techniques to establish material-specific properties of gate-stack constituents (i.e., high-κ dielectric stacks and electrodes) and complete gate-stack structures. Hence, the characterizati...

Flexible organic phototransistors are fabricated using polylactide (PLA), a polar bio-material, as the dielectric material. The charge trapping effect induced by the polar groups of the PLA layer leads to a photosensitivity close to ≈104. The excellent performance of this new device design is further demonstrated by incorporating the photo-transistors into a sensor array to successfully image a...

An all-dielectric semispherical lens with functions in shaping 3D wave-propagation paths is proposed and experimentally verified. When radiation sources are placed in the central region, the lens behaves as a magnifying device to resolve the sources in subwavelength scale; while when the electromagnetic waves impinge on the semispherical lens from outside, they will be guided spirally inward.

Sub-30 nm III-V planar Quantum-Well (QW) n-type MOSFETs are fabricated through a self-aligned CMOS compatible front-end process. Good performance and short-channel effect mitigation are obtained through the use of a QW-channel that incorporates a thin pure InAs subchannel and extremely scaled HfO2 gate dielectric on a very thin InP barrier (total barrier EOT<1 nm). The devices also feature self...

Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation Appl. The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750°C Comment on " Lifetime recovery in ultra-highly titanium-doped silicon for the implementation of an intermediate band material " [Appl. Deep ...

This paper reports on a novel method for on-chip continuous separation of dividing and non-dividing cells based on differences in their dielectric properties. By means of two opposite dielectrophoretic force fields at multiple frequencies, the two populations of cells flowing through the microfluidic device are focused towards distinct equilibrium positions, which can be correlated to their cel...