نتایج جستجو برای: dielectric degradation
تعداد نتایج: 189549 فیلتر نتایج به سال:
The dynamic on-resistance (RON) behavior of one commercial GaN HEMT device with p-GaN gate is investigated under hard-switching conditions. non-monotonic performance RON off-state voltage ranging from 50 to 400 V ascribed the “leaky dielectric” model. highest normalized value 1.22 appears at 150 and 200 V. gradual increase following maximum are found when exposed a stress for an extended time 1...
Besides the negative-bias temperature (NBTI) effect that is seen in the conventional polysilicon on SiO 2 or SiON gate stack, the high-k/metal gate stack also exhibits positive-bias temperature instability (PBTI) which has an adverse impact on the operation of the n-MOSFET. Significant threshold-voltage V t shift but negligible transconductance g m degradation was observed after PBTI stress. On...
In this paper, we studied the optical behavior of SiO2 thin films prepared via sol-gel route using spin coating deposition from tetraethylorthosilicate (TEOS) as precursor. Thin films were annealed at different temperatures (400-600oC). Absorption edge and band gap of thin layers were measured using UV-Vis spectrophotometery. Optical refractive index and dielectric constant were measured by ell...
Oil analysis is one of the main methods for monitoring the status of internal combustion engines and oils to ensure the lubricant's protective performance and engine health. This paper investigate oil condition monitoring in gasoline engine using oil dielectric coefficient measurement. At first capacitive sensor pectinate type is designed and manufactured that engine oil can pass through the se...
In this paper, an investigation is undertaken to introduce a simple and effective mechanism of over-dense plasma. The collisional effects reduce the rate of the energy transmission. In the collisional dissipative plasma, dielectric coefficient is complex due to collision and the imaginary part of dielectric coefficient is related to the collision. Materials with complex dielectric coefficient,...
in this work, we investigated the stability of molybdate-phosphonic acid (mpa) complex by density functionaltheory (dft) computations in six solvents with the dielectric constant ranging from 1.92 to 10.36. the methodsare used for calculations are b3lyp and b3pw9 i that have been studied in two series of basis sets: d95nand6-31+g (d,p) for hydrogen and oxygen atoms; lanl2dz for mo and phosphoru...
the natural frequency and pull-in instability of clamped-clamped nano-actuators in the presence of a dielectric layer are analyzed. the influence of the presence of casimir force, electrostatic force, fringing field effect, axial force, stretching effects and the size effect are taken into account. the governing equation of the dynamic response of the actuator is transformed in a non-dimensiona...
Silicon dioxide (SiO2) has played a critical role in the development of high-efficiency silicon (Si)-based photovoltaic devices. Recently, it experienced renaissance as an interlayer many new contact passivating structures. Studies have extensively investigated recombination process at Si–SiO2 interface, however, only little is known about impact temperature on surface recombination. In this st...
The metal-polymer contact interface plays a major role in the conduction and breakdown process flexible dielectrics. Enhancing barrier heights has been investigated for effectively blocking charge injection thus impeding degradation of dielectrics field. However, electronic band structure at metal-dielectric its relationship with electrical insulation properties are still not well understood du...
The effect of 53 MeV proton irradiation on the reliability silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. drain during affects degradation probability by TDDB tests. Proton-induced single event burnouts (SEB) devices which biased close to thei...
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