نتایج جستجو برای: cmos integrated circuits
تعداد نتایج: 336881 فیلتر نتایج به سال:
Nickel silicides are widely used in making electrical contact to complementary metal-oxidesemiconductor (CMOS) devices in advanced integrated circuits. They have been the preferred contacting material since the 2006 “65 nm technology node”, partly because a self-aligned-silicide (“SALICIDE” [1]) process is available. However, their high temperature behaviour is complex and, crucially, improved ...
Photonic integration within state-of-the-art CMOS and DRAM processes leverages the existing electronic manufacturing infrastructure to minimize cost. Suitable design techniques combined with in-foundry optimization or post-processing have enabled integration within several advanced technologies. !2012 Optical Society of America OCIS codes: (250.5300) Photonic integrated circuits; (200.4650) Opt...
Quantum-dot cellular automata (QCA) are a promising nanotechnology to implement digital circuits at the nanoscale. Devices based on QCA have the advantages of faster speed, lower power consumption, and greatly reduced sizes. In this paper, we are presented the circuits, which generate random numbers in QCA. Random numbers have many uses in science, art, statistics, cryptography, gaming, gambli...
This paper introduces four new resistorless circuits of first-order current-mode all-pass filter (CMAPF) based on dual-X current conveyor transconductance amplifier (DXCCTA). All the four circuits use a single DXCCTA and a capacitor for their realization. The main features of the proposed CMAPFs are: use of minimum active and passive components, resistorless realization, electronically adjustab...
This paper provides a comparative study of the proposed global clock distribution methods for high-speed digital integrated circuits. Both non-networked and distributed schemes such as travelling and standing wave clock distributions have been reviewed. Performance metrics are described and qualitatively discussed and non-networked approaches were simulated in a low-power 65nm CMOS process.
Radiation in space is potentially hazardous to microelectronic circuits and systems such as spacecraft electronics. Transient effects on circuits and systems from high energetic particles can interrupt electronics operation or crash the systems. This phenomenon is particularly serious in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) since most of modern ICs are implem...
Dynamic CMOS logic circuits are used in high performance VLSI chips in order to achieve very high system performance. These circuits requires less number of transistors as compare to CMOS logic circuits Dynamic logic circuits are much affected by noise as compared to static CMOS circuit. This is due to the fact that dynamic logic circuits have lower value of switching threshold voltage, which i...
The concept of a manufacturable technology that can provide parallel optical interconnects directly to a VLSI circuit, proposed over 15 years ago in [1], now appears to be a reality. One such optoelectronic-VLSI (OE-VLSI) technology is based on the hybrid flip-chip area-bonding of GaAs/AlGaAs Multiple-Quantum Well (MQW) electro-absorption modulator devices directly onto active silicon CMOS circ...
ii I hereby declare that I am the sole author of this thesis. I authorize the University of Waterloo to lend this thesis to other institutions or individuals for the purpose of scholarly research. I authorize the University of Waterloo to reproduce this thesis by photocoping or other means, in total or in part, at the request of other institutions or individuals for the purpose of scholarly res...
This paper presents low power operation of barrel shifter and rotator which are designed and simulated in 2 phase clocked adiabatic static CMOS logic. The power consumption of the circuits is compared with that of static CMOS logic. A barrel logic right shifter, a right rotator and shift/rotator are simulated in 45nm CMOS process technology. A mux based design is used for all the above circuits...
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