In this Letter, we report gate-tunable X-ray photoelectron emission from back-gated graphene transistors. The back-gated transistor geometry allows us to study photoemission from graphene layer and the dielectric substrate at various gate voltages. Application of gate voltage electrostatically dopes graphene and shifts the binding energy of photoelectrons in various ways depending on the origin...

Silicon wafers, implanted with oxygen at 550°C to form a buried oxide layer have been examined with TEM and x-ray diffraction. Implantation damage increased with depth up to 1500 ~ where some amorphous regions were seen. The amorphous region extended for -4500 A to a damaged crystalline region 1000 ~ thick. Double crystal x-ray rocking curves of the as-implanted and of annealed crystals were ob...

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fullydepleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics l...

Related Articles The vibrational spectrum of CaCO3 aragonite: A combined experimental and quantum-mechanical investigation J. Chem. Phys. 138, 014201 (2013) Raman spectroscopy of ferroelectric Sn2P2S6 under high pressure up to 40GPa: Phase transitions and metallization J. Appl. Phys. 113, 013511 (2013) Enhanced phonon scattering by mass and strain field fluctuations in Nb substituted FeVSb half...

We report on the fabrication and characterization of a novel magnetophotonic structure designed as iron garnet based magneto-optical nanoresonator cavity constrained by two noble metal mirrors. Since the iron garnet layer requires annealing at high temperatures, the fabrication process can be rather challenging. Special approaches for the protection of metal layers against oxidation and morphol...

The theoretical approach of TEY (total electron yield) for quantitative surface analysis is demonstrated for binary Au-Cu alloys and the evaluation of thin layer measurements on the example of thin aGa,,As layers on GaAs substrates. Further considerations deal with detection limits of the method. An interesting feature of TEY is the possibility to quantify buried thin layers. The detection limi...

Electrically injected photonic crystal membrane light emitting microcavities with spatially localized optical gain are reported. The localization of the InGaAs quantum well inside the defect cavity of the photonic crystal allows for efficient coupling of the optical mode to the gain medium and reduces nonradiative carrier recombination. The use of a buried oxide layer under the semiconductor me...

The interaction of implantation-induced dislocation loops and interstitials in silicon is studied. Experiments under dry oxidation conditions consistently show a significant reduction of OED (oxidation enhanced diffusion) of boron in a buried layer due to very efficient interstitial capturing action of dislocation loops, suggesting diffusion-limited dislocation loop growth. Simple analytic solu...

An electroabsorption modulator using a side-entry architecture achieved a contrast ratio exceeding 3 dB over a 3.5 nm range in the C-band, using a voltage swing of 1 V and operating at 1008C. Modulation was due to the quantum-confined Stark effect from ten Ge/SiGe quantum wells epitaxially grown on silicon-on-insulator (SOI) wafers. The device exploits an asymmetric Fabry-Perot resonator formed...

The self-organization of three dimensional quantum dot superlattices that spontaneously form during heteroepitaxial growth is investigated by using a three dimensional kinetic model. The model predictions show that the multilayer arrays of quantum dots can be fully or partially aligned vertically, or completely misaligned with respect to the buried islands, depending on the thickness of the spa...