CaCu3Ti4O12 possesses one of the largest values of the effective dielectric permittivity in a large frequency and temperature range ever reported for a ceramic material, and is thus a very promising material for various electronic and electromechanical applications. The origin of such high permittivity has been attributed to ‘electrical’ heterogeneities in the microstructure [1-3]. By Chemical ...

ELECTROLESS DEPOSITION OF SUPERCONDUCTING MAGNESIUM DIBORIDETHIN FILMS ON VARIOUS SUBSTRATES

in this research, graphene was synthesized by chemical vapor deposition (cvd) method in atmosphere pressure (14.7 psi). different functionalization method was used for oxidizing of graphene such as acid and alkaline treatments. the functionalized graphene (fg) was characterized by ftir and raman spectroscopy. nanofluid with water and different concentration (0.05, 0.15 and 0.25 wt %) of fg were...

We present a comparison of models describing the pyrolytic deposition of SiO2 with a low pressure chemical vapor deposition process. In order to meet industrial simulation requirements, e.g. accuracy and fast delivery of results, we present an overview of established and new models, their use within TCAD applications, and their best results which have been obtained by calibrations according to ...

iv

In this study, the silicon dioxide was deposited on the silicon substrate by metal-organic based plasma enhanced chemical vapor deposition (PECVD) method at the low temperature. The metal-organic tetraethoxy-silane (TEOS) was used as a silicon precursor in liquid state. In addition, oxygen and argon were used as ambient gases. Effects of the working pressure and O2/TEOS pressure ratio on the ch...