Molybdenum can be used as a substrate for bi-alkali antimonide photocathodes utilized for the generation of high brightness electron beams in superconducting radio frequency (SRF) photoinjector cavities. Operation at high field strength is required to obtain a low emittance beam, thus increasing the probability of field emission (FE) from the cathode surface. Usually, substrates are heated in s...

Introduction: Antimonide (Sb) based quantum-well (QW) heterostructures such as InAsSb and InGaSb are of interest for III-V CMOS due to their superior electron and hole transport properties, and ability to be grown on a common metaphoric buffer [1-2]. However, a major challenge towards realizing Sb-based complementary MOSFET technology is the successful integration of a high-κ gate dielectric. S...

The high-temperature thermoelectric properties of thallium (Tl) and potassium (K) double-filled cobalt antimonide (CoSb3)-based skutterudites with nominal compositions TlxK0.3Co4Sb12 (x = 0.1 - 0.3) were investigated. The filling fraction of Tl in CoSb3 was enhanced by co-filling with K, which resulted in all of the samples showing the filled-skutterudite single phase. Owing to the high filling...

Noninvasive monitoring of blood/tissue glucose concentrations has been successfully accomplished in individual diabetic subjects by using near-infrared (NIR) spectroscopy coupled with chemometric methods. Three different spectrometer configurations were tested: a) a Fourier-transform infrared spectrometer with an indium antimonide detector; b) a grating monochromator equipped with a silicon (Si...

A transportable prototype Faraday rotation spectroscopic system based on a tunable external cavity quantum cascade laser has been developed for ultrasensitive detection of nitric oxide (NO). A broadly tunable laser source allows targeting the optimum Q(3/2)(3/2) molecular transition at 1875.81 cm(-1) of the NO fundamental band. For an active optical path of 44 cm and 1-s lock-in time constant m...

This paper demonstrates, for the first time, enhancement mode antimonide MOSFETs by integrating a composite highgate stack (3nm Al2O3-1nm GaSb) with ultrathin InAs0.7Sb0.3 QW (7.5nm). The MOSFET exhibits record high electron drift mobility of 5200 cm2/Vs at a carrier density (Ns) of 1.8x1012cm-2, sub-threshold slope of 150mV/decade, ION-IOFF ratio of ~4000x within a voltage window of ~1V, high ...

Nanoporous structures have a great potential for application in electronic and photonic materials, including field effect transistors, photonic crystals, and quantum dots. The control of size and shape is important for such applications. In this study, nanoporous structure formation on the indium antimonide (InSb) surface was investigated using controlled focused ion beam irradiation. Upon incr...

2014 High frequency ballistic phonons were radiated by the heat pulse method (To 4.2 K) into degenerate n-type indium antimonide crystals. We first review the relevant aspects of the electronphonon interaction : cut-off for phonon wavevectors larger than twice the Fermi radius (q > 2 kF), selective coupling of the longitudinal modes and screening effects. Then, we report original extensive...