Memristor crossbar arrays can compose the efficient hardware for artificial intelligent applications. However, requirements a linear and symmetric synaptic weight update low cycle-to-cycle (C2C) device-to-device variability as well sneak-path current issue have been delaying its further development. This study reports on thin-film amorphous oxide-based 4×4 1-transistor 1-memristor (1T1M) crossb...

In this paper, we propose the design and fabrication of a novel heterojunction semiconductor–insulator–semiconductor (SIS) front surface interdigitated back-contact (IBC) solar cell. We approximate performance parameters loss analysis proposed cell using MATLAB software programming. Many studies have reported experimental amorphous silicon (a-Si) IBC cells. A number designs with promising effic...

Amorphous Cu–Sn–I is a promising p-type transparent semiconductor. Therefore, herein, composition and structure of sputtered thin films with varying thickness Sn content are investigated by different electron microscopy techniques, energy-dispersive X-ray spectroscopy, absorption spectroscopy at the Cu, Sn, I K-edge. After exposure to air, found contain significant amounts oxygen, leading compl...