Recent advances in thin-film crystal-g:rowth techniques such as molecular-beam epitaxy (MBE) have enabled the fabrication of quantum-well devices, which consist of alternating layers of various crystalline solid materials so thin that the materials' combined quantum-mechanical properties override their individual bulk properties. By using MBE, we constructed a number of quantum-well devices tha...

Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal-oxide-semiconductor field-effect transistors MOSFETs are reported. The addition of edge disorder significantly reduces ON-state currents and increases OFF-state currents, and introduces wide variability across devices. These effects decrease as ribbon widths increase and as edge...

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies c...

Dilute magnetic semiconductors (DMS) are envisioned as sources of spin-polarized carriers for future semiconductor devices which simultaneously utilize spin and charge of the carriers. The hope of discovering a DMS with ferromagnetic order up to room temperature still motivates research on suitable DMS materials. Two candidate wide-band gap DMS are Gd:GaN and Co:ZnO. We have used hard X-ray abs...

The use of ab initio calculation for materials design is an interdisciplinary research that bridges between computational physics and applied physics. It will become indispensable for future generations in the 21st century where there will be a major shift in the structure of industry as industrialized societies evolve into information societies. Based on the successful application of materials...

Nanoscale zinc oxide (ZnO) rods of diameters close to the Bohr-exciton radius ( approximately 2 nm) can be prepared from a simple acetate precursor, resulting in ligand-capped rods of ZnO, highly dispersible in nonpolar solvents. Zinc oxide, ZnO, is a wide band-gap semiconductor with applications in blue/ultraviolet (UV) optoelectronic devices and piezoelectric devices. We observe self-assembly...