نتایج جستجو برای: titanium nitride thin film reactive sputtering

تعداد نتایج: 388612  

Journal: :IEEE transactions on quantum engineering 2023

We report on the development and characterization of superconducting damascene tantalum nitride (TaN) nanowires, 100 nm to 3 μm wide, with TaN thicknesses varying from 5 35 nm, using 193 optical lithography chemical mechanical planarization among other 300 mm wafer-scale processes. The film composition chosen for nanowire fabrication was informed by a detailed study unpatterned films nitrogen r...

2017
Grzegorz Greczynski S. Mraz J. M. Schneider Lars Hultman G. Greczynski S. Mráz L. Hultman

We report x-ray photoelectron spectroscopy (XPS) analysis of native Ti target surface chemistry during magnetron sputtering in Ar/N2 atmosphere. To avoid air exposure, the target is capped immediately after sputtering with a few-nm-thick Al overlayers, hence, information about the chemical state of target elements as a function of N2 partial pressure pN2 is preserved. Contrary to previous repor...

2005
c.-p. liu j.-j. chang s.-w. chen h.-c. chung y.-l. wang

Cobalt pyramid-like nanostructures with sharp tips were formed on the surfaces of cobalt thin films grown by magnetron sputtering only when a negative bias was applied. There are two types of pyramids, which grew on top of a columnar grain structure directly from Si(001) substrates. The formation of pyramid-like nanostructures is only selective to a ε-Co (hcp) thin film but not a α-Co (fcc) thi...

2003
Yulin Li Simon Ho

VACUUM PUMPING STUDY OF TITANIUM-ZIRCONIUM-VANADIUM THIN FILMS* Yulin Li and Simon Ho, LEPP, Cornell University, Ithaca, NY 14853, USA Abstract Vacuum pumping via non-evaporable getter (NEG) thin film deposited directly onto the interior of a vacuum chamber is a novel way to achieve extreme high vacuum. As part of R&D efforts for the proposed Energy Recovery Linac at Cornell, the pumping perfor...

Journal: :Coatings 2023

Titanium nitride (TiN) thin films deposited by high-power pulsed magnetron sputtering usually have a high compressive residual stress, which is not conducive for the adherence of TiN films. This study investigated potential Ti2AlN releasing stress HPPMS-deposited and evaluated strength hardness TiN/Ti2AlN multilayers introducing MAX phase to form multilayers. The results showed that smooth with...

2013
Masumi Akita Kayoko Tanaka Noriko Murai Sachiko Matsumoto Keiko Fujita Takashi Takaki Hidetoshi Nishiyama

We examined CD133 distribution in a human hepatoblastoma cell line (HuH-6 clone 5). We directly observed the cultured cells on a pressure-resistant thin film (silicon nitride thin film) in a buffer solution by using the newly developed atmospheric scanning electron microscope (ASEM), which features an open sample dish with a silicon nitride thin film window at its base, through which the scanni...

2012
M. Irimia A. P. Rambu G. Zodieru I. I. Leonte M. Purica F. Iacomi

Gallium doped zinc oxide, GZO, thin films have been deposited onto glass substrate by rf magnetron sputtering at various substrate temperatures. The electrical and optical properties of the thin films have been studied as a function of substrate temperature. X-ray diffraction was used in order to investigate thin film structures. The thin film structure was stabilised by heating the samples in ...

2003
D. J. Christie W. D. Sproul

Reactive co-sputtering is a means to create films of customized or graded index of refraction. This gives the optical coating designer new options, and enables practical realization of new classes of coatings. Two neighboring targets may be sputtered such that material from both targets and reactive gas are incident on the workpiece, depositing a film consisting of a compound. For example, if o...

2014
Fang-Hsing Wang Hsin-Hui Kuo Cheng-Fu Yang Min-Chu Liu

In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films...

2001
VACUUM CHAMBERS P. He H. C. Hseuh M. Mapes R. Todd

The inner surface of the ring vacuum chambers of the US Spallation Neutron Source (SNS) will be coated with ~100 nm of Titanium Nitride (TiN). This is to minimize the secondary electron yield (SEY) from the chamber wall, and thus avoid the so-called e-p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Both DC sputtering and DCmagnetron sputte...

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