We have investigated the radiation induced generation of paramagnetic point defects in high surface area sol-gel silicates containing various concentrations of the Raman active 608 cm -~ D 2 band attributed to strained cyclic trisiloxanes (3-membered rings). Our results suggest a correlation between the concentration of the 3-membered rings with the concentration of radiation induced paramagnet...

In this paper physics based analytical model for threshold voltage of nanoscale biaxial strained nMOSFET has been presented. The maximum depletion depth and surface potential in biaxial strained–Si nMOSFET is determined, taking into account both the quantum mechanical effects (QME) and effects of strain in inversion charge sheet. The results show that a significant decrease in threshold voltage...

We investigate the magnetotransport properties of strained 80 nm thick HgTe layers featuring a high mobility of μ ∼ 4 × 10(5) cm(2)/V · s. By means of a top gate, the Fermi energy is tuned from the valence band through the Dirac-type surface states into the conduction band. Magnetotransport measurements allow us to disentangle the different contributions of conduction band electrons, holes, and...

A model describing the anisotropic electron mobility in strained Si has been developed. Our analytical model includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, and doping dependence. Monte Carlo simulations were performed to verify the results for the complete range of Ge contents and for a general orientation of the SiGe buffer. Our m...

The ambipolar diffusion length is measured in strained &Gal-&/InP quantum wells for several mole fractions in the interval 0.3 <X <0.8 by cathodoluminescence. The ambipolar diffusion length is found to have a significantly higher value in the lower indium mole fraction samples corresponding to tensile-strained wells. This longer diffusion length for the tensile samples is consistent with result...

Tetragonal zinc phosphide (a-Zn3P2) was grown pseudomorphically, by compound-source molecularbeam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn3P2(004):GaAs(002) and Zn3P2(202):GaAs(111). Partial relaxation of the Zn3P2 lattice was observed for films that were 4150 nm in thickness. Van der Pauw and Hall effect measurements indicated that carrier mo...

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si(1-x)Ge(x) substrates with x< or =0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density function...

Measurements of elastic constants of strained 200 and 400 nm thin films, as well as unstrained samples, of the colossal magnetoresistance (CMR) material La0.67Ca0.33MnO3 are presented. Since the peak resistance temperature of a strained CMR film decreases as the film thickness decreases, it is of interest to see if features in the elastic constants, reflecting structural or magnetic changes, fo...

Point-defect-mediated diffusion processes are investigated in strained SiGe alloys using kinetic lattice Monte Carlo KLMC simulation technique. The KLMC simulator incorporates an augmented lattice domain and includes defect structures, atomistic hopping mechanisms, and the stress dependence of transition rates obtained from density functional theory calculation results. Vacancy-mediated interdi...

We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found...