نتایج جستجو برای: silicon backplate

تعداد نتایج: 81405  

سعید جلالی اسدآبادی, , مرتضی رفیعی, ,

  Work function and surface energy per unit area were calculated in the framework of density functional theory (DFT) with Linearized A ug mented Plane Wave Plus Local Orbital method in full potential for a clean symmetric slab of silicon containing two (top and bottom) surfaces. The surfaces were theoretically modeled using supercell technique by stacking a variety of silicon layers along (111)...

 Abstract: The use of silicon has been considered as an effective strategy in reduce of cd uptake and affecting the oxidative damage caused by cd toxicity. The aim of this study was to investigate the effect of the presence silicon (0.1 mM/L) and different levels of cadmium (0.10, 50 μmol/L) in wheat plants under hydroponic conditions. The results showed that increasing the concentration of cd...

Journal: :international journal of nanoscience and nanotechnology 2013
m. zahedifar m. farangi m. h. pakzamir

silicon nanowire (sinw) arrays were produced by electroless method on polycrystalline si substrate, in hf/ agno3 solution. although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. in order to study the influence of etching time (which affects the sinws length) on d...

Journal: :Plant physiology 2004
Jian Feng Ma Namiki Mitani Sakiko Nagao Saeko Konishi Kazunori Tamai Takashi Iwashita Masahiro Yano

Rice (Oryza sativa L. cv Oochikara) is a typical silicon-accumulating plant, but the mechanism responsible for the high silicon uptake by the roots is poorly understood. We characterized the silicon uptake system in rice roots by using a low-silicon rice mutant (lsi1) and wild-type rice. A kinetic study showed that the concentration of silicon in the root symplastic solution increased with incr...

1999
L. S. Sidhu T. Kosteski S. Zukotynski N. P. Kherani

This article presents infrared absorption data of amorphous silicon alloys in which the hydrogen isotopes deuterium and tritium have been substituted for hydrogen. Silicon–deuterium and silicon– tritium vibration frequencies are related to silicon–hydrogen vibration frequencies by simple mass relationships. The silicon–deuterium wagging vibration is broadened and blueshifted due to strong coupl...

Journal: :Journal of SHM 1994

2013
A. Orpella J. Puigdollers D. Soler J. Bertomeu J. Andreu

In this work we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the Quasi-Steady-State Photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on nand p-type float...

2010
K. J. Weber

A corona discharge is used to create and store negative charge in the silicon nitride films of silicon dioxide/silicon nitride stacks. Effective lifetime measurements on both textured and planar, as well as both boron diffused and undiffused silicon samples passivated with silicon oxide/silicon nitride stacks, show that the creation of negative charge in the nitride layer results in an improvem...

2014
Shigeru Yamada Yasuyoshi Kurokawa Shinsuke Miyajima Makoto Konagai

UNLABELLED The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1...

2001
Jongpal Kim Dong-il Cho Richard S. Muller

In this paper, we explain the mechanical properties of single-crystalline silicon with respect to deflectional and torsional motions. Young's modulus, Poisson’s ratio, and shear modulus are isotropic on silicon (111), whereas the variations on silicon (100) and (110) are quite significant. We newly derive formulae for bulk shear modulus of silicon (100), (110) and (111) and show that bulk shear...

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