Co-design strategy with low-capacitance (low-C) consideration for on-chip ESD protection in RF ICs is a solution to mitigate RF performance degradations caused by ESD protection device. A low-C design on ESD protection device was presented in this paper. An RF power amplifier (PA) codesigned with the low-C ESD protection device was also presented in this paper. Before ESD stress, RF performance...

A novel fully integrated CMOS LC tank VCO is presented. The LC tanks are implemented by exploiting the active circuit ‘boot-strapped inductor’ (BSI), which behaves like a high-quality factor inductor. Particularly, the LC tanks have been implemented by introducing a new version of the CMOS BSI circuit, which provides better versatility and design reliability. In order to verify the effectivenes...

Absrracl A highly linear CMOS RF amplifier and mixer circuits adopting MOSFET transconductance linearization bv linearlv suoemosine several commonTherefore it is very important to linearize MOSFET transconductance for both RF amplifier and mixer circuits. We have shown that multide eated transistor (MGTR) 111 ~ _ . source FET transistors in parallel, combined with some additional circuit techni...

Silicon-on-insulator (SOI) CMOS offers a 20–35% performance gain over bulk CMOS. High-performance microprocessors using SOI CMOS have been commercially available since 1998. As the technology moves to the 0.13m generation, SOI is being used by more companies, and its application is spreading to lower-end microprocessors and SRAMs. In this paper, after giving a short history of SOI in IBM, we de...

This paper presents a radio-frequency (RF) transceiver designed, using a standard 0.18 μm CMOS process, for operation in the 2.4 GHz ISM band. The receiver has a sensivity of -64 dBm and consumes 3.5 mW from a 1.5 V supply. The RF transmitter delivers an output power of +11 dBm (15 mW) with a power consumption of 45 mW. These features make the RF transceiver suitable to be integrated in microsy...

In this work, a Radio Frequency (RF) Energy Harvester comprised of a differential Radio Frequency-to-Direct Current (RF-DC) converter realized in ST130 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology and a customized broadband Printed Circuit Board (PCB) antenna with inductive coupling feeding is presented. Experimental results show that the system can work with different carrier f...

This paper describes recent technology trend of mixed analog digital RF circuits. With the progress of CMOS technology, largescale digital signal process and control function can be integrated in an RF integrated circuit and some analog signal process blocks can be translated to digital signal processing units. At the same time, the design of remaining analog functional blocks becomes very hard...

ESD protection in RF integrated circuits has several considerations: low parasitic capacitance, constant input capacitance, and insensitive to substrate coupling noise. In this paper, a new ESD protection design with polysilicon diodes for RF IC applications is proposed and characterized. The proposed polysilicon diode is constructed by polysilicon layer in a general CMOS process with a central...

To achieve the performance required of the latest generation of wireless access, DOCSIS, and a plethora of other radio applications, direct RF-sampling technology holds the promise of increased flexibility and higher performance. Direct RF-sampling provides the flexibility by moving much of the RF signal processing into the digital domain, thereby eliminating much of the analog signal processin...