We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the e ect of increasing RF power and H2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-SiC by the RF-PECVD technique. Doping experiments...

Reliable feature extraction, condition monitoring, and fault modeling are critical to understanding equipment degradation and implementing the proper maintenance decisions in manufacturing processes. Semiconductor manufacturing machines are highly sophisticated systems, consisting of multiple interacting components operating in highly variable operating conditions. This complicates performance ...

Obtaining high-throughput electrophysiology recordings is an ongoing challenge in fundamental ion channel biophysics and drug discovery. One particular area of development is the replacement of glass pipettes with planar devices in order to increase the throughput. However, successful patch-clamp recording depends on an ideal surface coating that promotes and stabilizes giga-seals formation. He...

Diamond like carbon (DLC) films were deposited on Si and then patterned to form 40 nm features as nanoimprint templates. A plasma enhanced chemical vapor deposition (PECVD) system with CH4 precursor was used to deposit DLC films on Si and quartz substrates. These films were then characterized using Raman spectroscopy, atomic force microscopy (AFM), nanoindentation, and contact angle measurement...

Obtaining high-throughput electrophysiology recordings is an ongoing challenge in fundamental ion channel biophysics and drug discovery. One particular area of development is the replacement of glass pipettes with planar devices in order to increase the throughput. However, successful patchclamp recording depends on an ideal surface coating that promotes and stabilizes giga-seals formation. Her...

Hydrogenated intrinsic amorphous silicon ((i) a-Si:H) layers deposited on n-type crystalline silicon (c-Si) by plasma enhanced chemical vapour deposition (PECVD) are investigated during long-time thermal treatment (100 h at 200°C) with regard to the depth profile of hydrogen in the a-Si layer and its diffusion into the c-Si bulk. The morphology of the (i) a-Si:H is manipulated by the PECVD proc...

Silicon oxynitride (SiOxNy:H) layers were grown from 2%SiH4/N2 and N2O gas mixtures by plasma-enhanced chemical vapor deposition (PECVD). Layer properties such as refractive index, deposition rate, thickness non-uniformity and hydrogen bond content were correlated to the relevant deposition parameters including radio frequency power, chamber pressure, total gas flow, substrate temperature and N...