Abstract Molecular beam epitaxy growth and analysis of GaAsBi on compositional step-graded InGaAs buffer layers are presented in this study. The developed is only 240 nm thick, exhibits very low surface roughness while reaching up to 0.46% lattice-mismatch with a GaAs substrate. Reciprocal-space mappings showed that 500 thick 2.7%–5.3% Bi remain pseudomorphic the buffer, contrast grown were fou...

The growth and interdiffusion of Ti and Ni on a Mo( 110) surface have been studied by Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and temperature programmed desorption spectroscopy (TPD). Ti grows layer-by-layer upon deposition on MO{ 110) at 115 K, whereas annealing multifaye~ of Ti to 900 K causes formation of Ti three-dimensional clusters. Submonolayer Ti on Mo(...

Approach: Wafers and Products The BiHEMT process architecture is a hybrid GaAs/InGaP HBT process co-integrated with an optically-defined 0.7 um gate, InGaP etch-stop, pseudomorphic high electron mobility (pHEMT) process. Both enhancement-mode and depletionmode pHEMT transistors are available. This process offers both power amplifier and RF switch capability, as well as low-noise performance to ...

This work provides comparative studies of a double -doped Al0.3Ga0.7As/InxGa1−xAs/GaAs symmetrically graded x = 0.15 → 0.2 → 0.15 doped-channel field-effect transistor DD-DCFET with respect to a conventional double -doped pseudomorphic high electron mobility transistor pHEMT and a conventional DCFET structure. All threes samples, grown by the low-pressure metallorganic chemical vapor deposition...

Received May 19, 2017 Revised Nov 14, 2017 Accepted Nov 16, 2017 An optimized empirical modelling for a 0.25μm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and rel...

The structure and strain of ultrathin CoO films grown on a Pt(0 0 1) substrate and on a ferromagnetic FePt pseudomorphic layer on Pt(0 0 1) have been determined with in situ and real time surface x-ray diffraction. The films grow epitaxially on both surfaces with an in-plane hexagonal pattern that yields a pseudo-cubic CoO(1 1 1) surface. A refined x-ray diffraction analysis reveals a slight mo...

The tetragonal states produced by isotropic pseudomorphic epitaxial strain in the ~001! plane on a tetragonal phase of a crystal are calculated for V, Ti, Rb, Li, K, and Sr from first-principles electronic theory. It is shown that each metal has two tetragonal phases corresponding to minima of the total energy with respect to tetragonal deformations ~and hence are equilibrium phases! and that t...