Anelastic materials exhibit gradual full recovery of deformation once a load is removed, leading to dissipation of internal mechanical energy. As a consequence, anelastic materials are being investigated for mechanical damping applications. At the macroscopic scale, however, anelasticity is usually very small or negligible, especially in single-crystalline materials. Here, we show that single-c...

In and Ga impurities substitutional to Al in the oxide layer resulting from diffusion out of the substrate are identified as candidates for electron traps under inversion at In0.53Ga0.47As/Al2O3 interfaces. Through density-functional calculations, these defects are found to be thermodynamically stable in amorphous Al2O3 and to be able to capture two electrons in a dangling bond upon breaking bo...

In this study, the use of the three-layer feed forward neural network has been investigated for estimating of infinite dilute diffusion coefficient ( D12 ) of supercritical fluid (SCF), liquid and gas binary systems. Infinite dilute diffusion coefficient was spotted as a function of critical temperature, critical pressure, critical volume, normal boiling point, molecular volume in normal boilin...

Point defects such as vacancies and interstitial atoms serve as primary mediators of solid-state diffusion in many materials. In some cases, the defects encounter surfaces where annihilation can occur. Quantification of annihilation rates presents formidable challenges, since point defect concentrations are typically low and therefore difficult to monitor directly. The present work develops a m...

Contact defects are one of several types of defects that arise generically in oscillatory media modelled by reaction-diffusion systems. An interesting property of these defects is that the asymptotic spatial wavenumber is approached only with algebraic order O(1/x) (the associated phase diverges logarithmically). The essential spectrum of the PDE linearization about a contact defect always has ...

Boron diffusion and activation at high concentrations are key problems in the formation of shallow P+ junctions. Therefore, it is needed to understand and to predict accuratly the dopant behaviour under these conditions. In this paper, the modeling of boron is discussed, by the use of a non-equilibrium pointdefect model, including amorphization and a dynamic clustering component. The initial co...

This paper focuses on fruit defect detection and glare removal using morphological operations, Glare removal can be considered as an important preprocessing step as uneven lighting may introduce it in images, which hamper the results produced through segmentation by Gabor filters .The problem of glare in images is very pronounced sometimes due to the unusual reflectance from the camera sensor o...