نتایج جستجو برای: pn semiconductor detector

تعداد نتایج: 128614  

2003
Mark H.M. Winands

The endgame of Lines of Action (LOA) is problematic because (1) LOA evaluation functions are not good predictors in the case of forced wins and (2) the state-space complexity of the LOA endgame is too large to use endgame databases. Because of the frequency of forced moves and the mobility component in the LOA endgame the utility of proof-number (PN) search is investigated in this paper. Also t...

2005
N. Biyikli E. Ozbay

Solar-blind metal–semiconductor–metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current–voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and ...

2015
AL EBERLE S MIKULA R SCHALEK J LICHTMAN ML KNOTHE TATE D ZEIDLER

Electron-electron interactions and detector bandwidth limit the maximal imaging speed of single-beam scanning electron microscopes. We use multiple electron beams in a single column and detect secondary electrons in parallel to increase the imaging speed by close to two orders of magnitude and demonstrate imaging for a variety of samples ranging from biological brain tissue to semiconductor waf...

2014
Yaron Danon Rajendra Dahal Kuan-Chih Huang James J.-Q. Lu Adam Weltz Ishwara B. Bhat

Solid-state neutron detectors utilize latest advancement in semiconductors for development of efficient and economical neutron detectors. The recent shortage and price increase of He-3 resulted in more incentive to reach maturity of this technology and enable replacement of gas based neutron detectors. Solid state neutron detectors provide important advantages over current neutron detectors suc...

2007
S. H. Lim W. Mar P. Matheu E. T. Yu

Experimental characterization and finite-element numerical simulations of the electromagnetic interaction between Au nanoparticles positioned atop a Si pn junction photodiode and incident electromagnetic plane waves have been performed as a function of wavelength. The presence of the Au nanoparticles is found to lead to increased electromagnetic field amplitude within the semiconductor, and con...

2006
W. L. Liu W. J. Chen S. H. Hsieh T. K. Tsai

A microfluidic channel and a contactless capacitance detector were integrated on a glass chip by a semiconductor manufacturing process for separating and analyzing Rhodamine B and inorganic ion. The electrodes of the capacitance detector were formed successively by sputtering, electroless and electrodepositions. Samples containing fluorescent agent (Rhodamine B) and inorganic ions (K, Na, and L...

2014
A. Benz M. Krall S. Schwarz D. Dietze H. Detz A. M. Andrews W. Schrenk G. Strasser K. Unterrainer

We present the design, fabrication and characterisation of an intersubband detector employing a resonant metamaterial coupling structure. The semiconductor heterostructure relies on a conventional THz quantum-cascade laser design and is operated at zero bias for the detector operation. The same active region can be used to generate or detect light depending on the bias conditions and the vertic...

2011

This pathway describes the development of soft gamma-ray/hard x-ray detector arrays at NASA’s Goddard Space Flight Center (GSFC, or Goddard), through a collaboration between the gamma-ray spectroscopy group and the detector branch. The Cadmium Zinc Telluride (CdZnTe, or CZT) detectors which resulted from this decade-long development were first flown on the wildly successful SWIFT mission in 200...

Journal: :Radiation protection dosimetry 2014
A Pola D Bortot M V Introini R Bedogni A Gentile A Esposito J M Gómez-Ros E Passoth A Prokofiev

In the framework of the NESCOFI@BTF project of the Italian Institute of Nuclear Physics, different types of active thermal neutron sensors were studied by coupling semiconductor devices with a suitable radiator. The objective was to develop a detector of small dimensions with a proper sensitivity to use at different positions in a novel moderating assembly for neutron spectrometry. This work di...

Journal: :Optics express 2016
Himansu S Pattanaik Matthew Reichert David J Hagan Eric W Van Stryland

We utilize the recently demonstrated orders of magnitude enhancement of extremely nondegenerate two-photon absorption in direct-gap semiconductor photodiodes to perform scanned imaging of three-dimensional (3D) structures using IR femtosecond illumination pulses (1.6 µm and 4.93 µm) gated on the GaN detector by sub-gap, femtosecond pulses. While transverse resolution is limited by the usual ima...

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