نتایج جستجو برای: piezoelectric thin film

تعداد نتایج: 199311  

2012
Jyh Ming Wu Chen Xu Yan Zhang Zhong Lin Wang

N on-centrosymmetric (NCS) oxides have attracted considerable attention due to their unique symmetrydependent and spontaneous polarization properties, which are technologically important and are the basis of numerous applications in ferroelectricity, piezoelectricity, and nonlinear optics. Among NCS oxides, ZnO is an environmentally friendly and piezoelectric material. Therefore, single ZnOnano...

Journal: :journal of membrane science and research 0
mohammad khajouei department of chemical engineering, babol noshirvani university of technology, shariati ave.,babol, iran, post code 47148-71167 majid peyravi department of chemical engineering, babol noshirvani university of technology, shariati ave.,babol, iran, post code 47148-71167 mohsen jahanshahi department of chemical engineering, babol noshirvani university of technology, shariati ave.,babol, iran, post code 47148-71167

over the past decade, many applications were intended for filtration by membrane technology especially the thin film composite (tfc) membranes. in advanced developments of thin film membranes, an attempt was made to spread a new generation of membranes called thin film nano composite (tfn) membranes. however, in the last generation of tfns, an ultrathin selective film of nanoparticles is coated...

Journal: :Scientific reports 2015
Yuelin Li Carolina Adamo Pice Chen Paul G Evans Serge M Nakhmanson William Parker Clare E Rowland Richard D Schaller Darrell G Schlom Donald A Walko Haidan Wen Qingteng Zhang

Through mapping of the spatiotemporal strain profile in ferroelectric BiFeO3 epitaxial thin films, we report an optically initiated dynamic enhancement of the strain gradient of 10(5)-10(6) m(-1) that lasts up to a few ns depending on the film thickness. Correlating with transient optical absorption measurements, the enhancement of the strain gradient is attributed to a piezoelectric effect dri...

2006
Per K. Rekdal

In a recent paper [Phys. Rev. Lett. 97, 070401 (2006)] the transition rate of magnetic spin-flip of a neutral two-level atom trapped in the vicinity of a thick superconducting body was studied. In the present paper we will extend these considerations to a situation with an atom at various distances from a dielectric film. Rates for the corresponding electric dipole-flip transition will also be ...

Journal: :Nature nanotechnology 2016
Umesh Kumar Bhaskar Nirupam Banerjee Amir Abdollahi Zhe Wang Darrell G Schlom Guus Rijnders Gustau Catalan

Flexoelectricity allows a dielectric material to polarize in response to a mechanical bending moment and, conversely, to bend in response to an electric field. Compared with piezoelectricity, flexoelectricity is a weak effect of little practical significance in bulk materials. However, the roles can be reversed at the nanoscale. Here, we demonstrate that flexoelectricity is a viable route to le...

2014
T. Maeder P. Muralt L. Sagalowicz I. Reaney M. Kohli A. Kholkin N. Setter

An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices, Very reactive zirconium films have been taken in order to test the quality of the specially designed RuO2/Cr buffer under the condition of ...

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