We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I...

A power VDMOSFET has been simulated using PISCES-II, a 2-D numerical device simulator. The doping densities and device dimensions are chosen so as to simulate a typical device structure with one micron channel length. These simulations are aimed at understanding the device physics through various internal electrical quantities like potential distribution, electric field distribution, and electr...

The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popul...

Electronic circuit simulation programs like SPICE have built-in models for semiconductor devices like MOSFET and BJT. However, they do not provide models for electrochemical sensors like ISFETs (Ion-Sensitive Field-Effect Transistors). This paper presents a behavioral macromodel for ISFET-based pH-sensors implemented using PSPICETM. The macromodel is then utilized to present a comparative analy...

A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage i...

Abstract This paper presents accurate small-signal modeling of RF CMOS, valid from DC to GHz ranges, using device simulation and analytical modeling. Distributed NQS effects in terms of circuit parameters are discussed and an estimation of the limit up to which quasi-static MOSFET models are reasonable is presented. The impact of the substrate network through gmb multiplication on terminal ac c...

In thispaper comparative performance analysis of MOSFET based& IGBT based single phase inverter has been evaluted. The paper compares overall THD of output voltage of thesetwoproposedinverters. Heresinusiodal PWM scheme has been usedwhich compares a sinusoidalreference voltage with a carrier basedmodulating signal to generategating pulse for inverter circuit. Power quality of inverter output vo...