We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon ph...

We report on Raman scattering by longitudinal optical phonons in In; _ y z AIy Guz As (1 y z = 0.53) lattice matched to InP. The quaternary alloys were grown on (001) InP by molecular beam epitaxy. The phonon spectra exhibit three-mode behavior. The frequencies of AIAsand GaAs-Iike modes vary linearly with the concentration of AI (or Ga) while the position of the InAs-Hke phonon remains nearly ...

We report the results of P NMR measurements on trioctylphosphine oxide ~TOPO! passivated InP quantum dots. The spectra show distinct surface-capping sites, implying a manifold of crystal– ligand bonding configurations. Two In P surface components are resolved and related to different electronic surroundings. With decreasing particle size the In P core resonance reveals an increasing upfield che...

Abstract. Ice-nucleating particles (INPs) initiate ice formation in supercooled clouds, typically starting western Europe at a few kilometres above the ground. However, little is known about concentration and composition of INPs lower free troposphere (FT). Here, we analysed active ?10 ?C (INP?10) ?15 (INP?15) that were collected under FT conditions high-altitude observatory Jungfraujoch betwee...

K. L. Chiu,1 M. R. Connolly,1,2 A. Cresti,3 C. Chua,1 S. J. Chorley,1 F. Sfigakis,1 S. Milana,4 A. C. Ferrari,4 J. P. Griffiths,1 G. A. C. Jones,1 and C. G. Smith1 1Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB3 0HE, United Kingdom 2National Physical Laboratory, Hampton Road, Teddington TW11 0LW, United Kingdom 3IMEP-LAHC (UMR CNRS/INPG/UJF 5130), Grenoble I...

The DC and RF characteristics of double heterojunction bipolar transistors (DHBTs) with a compressively strained InGaAsSb base prepared by solid-source molecular beam epatixy (MBE) are investigated. Compared with conventional InGaAs/InP DHBT structures, the proposed InGaAsSb/InP HBT exhibits lower baseemitter turn-on voltage and VCE-offset voltage. Also observed are the high collector current d...

Using 1-μm InP HBT technology, a transimpedance amplifier (TIA) IC for optical links using 100-Gb/s dual polarization quadrature phase shift keying (100-G DP-QPSK) was designed and fabricated. Its wide dynamic range of 0.2∼2mAppd input current and good linearity of less than 3.3-% total harmonic distortion (THD) were confirmed. Also, externally controllable functions such as output amplitude ad...

We obtain an effective parametrization of the bulk electronic structure of InP within the Tight Binding scheme. Using these parameters, we calculate the electronic structure of InP clusters with the size ranging upto 7.5 nm. The calculated variations in the electronic structure as a function of the cluster size is found to be in excellent agreement with experimental results over the entire rang...

We present InP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown, processed and characterized. The excellent spectral response, higher than 75% internal quantum efficiency in UV and visible range, demonstrates the robustness of our...

Contact freezing is a mode of atmospheric ice nucleation in which collision between dry nucleating particle (INP) and water droplet results considerably faster heterogeneous nucleation. The molecular mechanism such an enhancement is, however, still mystery. While earlier studies had attributed it to collision-induced transient perturbations, recent experiments point the pivotal role nanoscale p...