To minimize the problem with scattering in deep tissues while increasing the penetration depth, we explored the feasibility of imaging in the relatively unexplored extended near infrared (exNIR) spectral region at 900 to 1400 nm with endogenous chromophores. This region, also known as the second NIR window, is weakly dominated by absorption from water and lipids and is free from other endogenou...

Recently, small-signal microwave performance has been reported for PNP InAlAs/InGaAs HBTs [1, 2]. While power performance of PNP AlGaAs/GaAs HBTs has been demonstrated [3], nothing has been reported on power performance of PNP HBTs in the InP material system. In this work, InAlAs/InGaAs PNP HBTs were fabricated and subsequently characterized under large signal conditions at X-band to determine ...

High performance deep-submicron inversion-mode InGaAs MOSFET with ALD Al2O3 as gate dielectric has been demonstrated. Transistors with gate lengths down to 150 nm have been fabricated and characterized. Record high extrinsic transconductance of 1.1 mS/μm has been achieved at Vds = 2.0 V with 5 nm Al2O3 as gate dielectric. Gm can be further improved to 1.3 mS/μm by reducing the gate oxide thickn...

This paper presents the design, fabrication and characterisation of InGaAs–InAlAs high electron mobility transistors (pHEMTs) suitable for low-frequency LNA designs. Very low levels of leakage, in the order of 0.05A/cm, are demonstrated by the pHEMTs, which have enabled the implementation of large-geometry, low-noise devices. Transistors with gate widths ranging from 200mm to 1.2mm are demonstr...

The concept of below-threshold and above-threshold current injection efficiency of quantum well sQWd lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW lasers. The role of heavy-hole leakage in the InGaAsN QW lasers is shown to be significant in determining the device temperature sensitivity....

A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0 .53Ga0 .47As/Al2O3 tri-gate n-FinFET. The extracted electron effective mobility μn is around 370 cm2 /V·s at low Vg−Vth bias at room temperature and decreases with increasing Vg , and increases with i...

We have studied the influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1−xAs/InP quantum well structures using the impurity-free vacancy disordering technique. Photoluminescence results revealed that an enhancement of interdiffusion was obtained when the samples were capped with SiO2. Although TiO2 layers were able to suppress the interdiffusion in the InGaAs/InP sys...

We report on various self-assembled In(Ga)As nanostructures by droplet epitaxy on GaAs substrates using molecular beam epitaxy. Depending on the growth condition and index of surfaces, various nanostructures can be fabricated: quantum dots (QDs), ring-like and holed-triangular nanostructures. At near room temperatures, by limiting surface diffusion of adatoms, the size of In droplets suitable f...