We report the observation of two dielectric transitions at 110 and 60 K in the microwave response of nonsuperconducting YBa2Cu3O6.0 crystals. The transitions are characterized by a change in polarizability and presence of loss peaks, associated with overdamped dielectric modes. An explanation is presented in terms of changes in polarizability of the apical O atoms in the Ba–O layer, affected by...

0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.07.091 * Corresponding author. Tel.: +1 404 894 4793; fax E-mail address: [email protected] (L. Mil Low-k time-dependent dielectric breakdown (TDDB) has been found to be a function of metal linewidth, when the distance between the lines is constant. Modeling requires determining the relationship between TDDB ...

Backend geometries on chips contain a wide variety of features. We are developing a full-chip reliability simulator for low-k dielectric breakdown that takes into account the vulnerable area, linewidth, vias, and line edge roughness. The simulator provides a link between test structure results and predictions of chip dielectric lifetime. However, these factors may not be sufficient for large ch...

The dielectric properties of Z-type hexaferrite Sr3Co2Fe24O41 (SCFO) have been investigated as a function of temperature from 153 to 503 K between 1 and 2 GHz. The dielectric responses of SCFO are found to be frequency dependent and thermally activated. The relaxation-type dielectric behavior is observed to be dominating in the low frequency region and resonance-type dielectric behavior is foun...

The dielectric response of graded composites having general power-law-graded cylindrical inclusions under a uniform applied electric field is investigated. The dielectric profile of the cylindrical inclusions is modeled by the equation i r =c b+r k where r is the radius of the cylindrical inclusions and c , b and k are parameters . Analytical solutions for the local electrical potentials are de...

We report on the nanosheet-thickness effects on the performance of top-gate MoS(2) field-effect transistors (FETs), which is directly related to the MoS(2) dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al(2)O(3) displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO(2), benefiting from the dielectric screening b...

Oxygen-related point defects can provide fixed charge or act as charge trapping centers in high-k gate stacks and, therefore, their origins and properties are of great interest. In this paper, reported experimental and theoretical results related to oxygen defects in HfO2 gate dielectrics are reviewed critically to assess the relative importance of different defect species in terms of their ele...

We bring out novel dielectric behavior of a spin-chain compound, Ca3Co2O6, undergoing Néel order at (TN = ) 24 K. It is found that the virgin curve in the plot of isothermal dielectric constant (ε') versus magnetic-field lies outside the 'butterfly-shaped' envelope curve well below TN (e.g., 2.6 K), with a signature of a partial arrest of the high-field magnetoelectric (ME) phase in zero-field ...