نتایج جستجو برای: germanium

تعداد نتایج: 6954  

2010
J. Reinspach A. Holmberg

We demonstrate two nanofabrication methods which improve the diffraction efficiency of high-resolution soft X-ray nickel zone plates. First, pulse electroplating is shown to result in uniform diffraction efficiency over the entire zone-plate area. A resulting enhancement of the total efficiency of 20% compared to conventional DC plating was measured. Second, we demonstrate that a high-resolutio...

Journal: :Applied optics 2009
T Allsop R Neal C Mou P Brown S Saied S Rehman K Kalli D J Webb J Sullivan D Mapps I Bennion

We demonstrate surface plasmon resonance (SPR) fiber devices based upon ultraviolet inscription of a grating-type structure into both single-layered and multilayered thin films deposited on the flat side of a lapped D-shaped fiber. The single-layered devices were fabricated from germanium, while the multilayered ones comprised layers of germanium, silica, and silver. Some of the devices operate...

Journal: :Chemical communications 2006
Shaun P Green Cameron Jones Peter C Junk Kai-Alexander Lippert Andreas Stasch

The neutral germanium(i) dimers, [{Ge(Piso)}(2)] and [{Ge(Giso)}(2)], Piso = [(ArN)(2)CBu(t)](-), Giso = [(ArN)(2)CNPr(i)(2)](-), Ar = C(6)H(3)Pr(i)(2)-2,6, which are stabilised by bulky amidinate and guanidinate ligands respectively, have been prepared by reduction of the corresponding germanium(ii) chlorides, [Ge(Piso)Cl] and [Ge(Giso)Cl]; theoretical studies suggest that the Ge-Ge bonds of [...

Journal: :Computer Physics Communications 2012
Janis Timoshenko Alexei Kuzmin Juris Purans

a r t i c l e i n f o a b s t r a c t Keywords: Reverse Monte Carlo EXAFS Wavelet analysis Germanium Rhenium trioxide In this work we present the Reverse Monte Carlo (RMC) modeling scheme, designed to probe the local structural and thermal disorder in crystalline materials by fitting the wavelet transform (WT) of the EXAFS signal. Application of the method to the analysis of the Ge K-edge and R...

Journal: :Optics letters 2011
J Ballato T Hawkins P Foy S Morris N K Hon B Jalali R Rice

Silica-clad optical fibers comprising a core of crystalline germanium were drawn using a molten core technique. With respect to previous fibers drawn using a borosilicate cladding, the present fibers exhibit negligible oxygen despite being fabricated at more than twice the melting point of the germanium. The counterintuitive result of less oxygen when the fiber is drawn at a higher temperatures...

2016
Philippe Gall Patrick Gougeon

The crystal structure of the title compound, dilithium germanium trimolybdenum octa-oxide, consists of distorted hexa-gonal-close-packed oxygen layers with stacking sequence ABAC along [001] that are held together by alternating lithium-germanium and molybdenum layers. The two Li(+) and Ge(4+) ions all have site symmetry 3m. and occupy, respectively, tetra-hedral and octa-hedral sites in the ra...

1997
J B Roldán J E Carceller

We have studied in depth the performance of superficial strained Si/Si1−x Gex channel MOSFETs. To do so, we developed a two-dimensional drift-diffusion simulator including inversion layer quantization and low-field mobility curves obtained by means of a Monte Carlo simulator. We have reproduced experimental results. The dependences of the performance enhancement obtained in these devices on the...

1996
R. A. Kroeger W. N. Johnson R. L. Kinzer J. D. Kurfess Naval

Germanium strip detectors combine high quality spectral resolution with two-dimensional positioning of -ray interactions. Readout is accomplished using crossed electrodes on opposite faces of a planar germaniumdetector. Potential astrophysics applications include focal plane detectors for coded-aperture or grazing incidence X-ray mirror imagers, and as detection elements of a high resolution Co...

2012
Shiromani Balmukund Rahi Garima Joshi

In this paper physics based analytical model for threshold voltage of nanoscale biaxial strained nMOSFET has been presented. The maximum depletion depth and surface potential in biaxial strained–Si nMOSFET is determined, taking into account both the quantum mechanical effects (QME) and effects of strain in inversion charge sheet. The results show that a significant decrease in threshold voltage...

2000
Daniel J. Aiken

Triple junction lnGaP/GaAs/Ge solar cells are highly current mismatched due to the excess current generating capability of the germanium subcell. This severe current mismatch invites new approaches for increasing performance beyond that of current triple junctions: Presented here are two approaches for improving the efficiency of III-V multi-junctions beyond that of current triple junction tech...

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