Development of High-k Gates for Advances CMOS Devices High dielectric constant (high-k) materials, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), alumina (Al2O3), and their silicates, have drawn a great deal of attention in recent years for potential use as gate dielectrics in advanced CMOS processes [1]. With high dielectric constants, gate dieletrics can be made thicker than SiO2 while...

We designed acene molecules attached to two semi-infinite metallic electrodes to explore the source-drain current of graphene and the gate leakage current of the gate dielectric material in the field-effect transistors (FETs) device using the first-principles density functional theory combined with the non-equilibrium Green's function formalism. In the acene-based molecular junctions, we modify...

There is great interest in highly sensitive separation methods capable of quickly isolating a particular cell type within a single manipulation step prior to their analysis. We present a cell sorting device based on the opposition of dielectrophoretic forces that discriminates between cell types according to their dielectric properties, such as the membrane permittivity and the cytoplasm conduc...

Temperature sensitivity of Si based rings can be nullified by the use of polymer over-cladding. Integration of athermal passive rings in an electronic-photonic architecture requires the possibility of multi-layer depositions with patterned structures. This requires establishing UV, thermal and plasma stability of the polymer during multi-layer stacking. UV stability is enhanced by UV curing to ...

In this study, we present selected reliability issues of double gate dielectric stacks for non-volatile semiconductor memory (NVSM) applications. Fabricated gate structures were consisted of PECVD silicon oxynitride layer (SiOxNy) as the pedestal layer and hafnium dioxide layer (HfO2) as the top gate dielectric. In the course of this work, obtained MIS structures were investigated by means of c...

BiVO₄/Mn1-xZnxFe₂O₄ was prepared by the impregnation roasting method. XRD (X-ray Diffractometer) tests showed that the prepared BiVO₄ is monoclinic crystal, and the introduction of Mn1-xZnxFe₂O₄ does not change the crystal structure of BiVO₄. The introduction of a soft-magnetic material, Mn1-xZnxFe₂O₄, was beneficial to the composite photocatalyst's separation from the liquid solution using an ...

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in the literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their suitability as electron emitters in vertical graphene base transistors (GBT...

Nanogenerators with capacitor structures based on piezoelectricity, pyroelectricity, triboelectricity and electrostatic induction have been extensively investigated. Although the electron flow on electrodes is well understood, the maximum efficiency-dependent structure design is not clearly known. In this paper, a clear understanding of triboelectric generators with capacitor structures is pres...

We present a technique to locally and rapidly heat water drops in microfluidic devices with microwave dielectric heating. Water absorbs microwave power more efficiently than polymers, glass, and oils due to its permanent molecular dipole moment that has large dielectric loss at GHz frequencies. The relevant heat capacity of the system is a single thermally isolated picolitre-scale drop of water...

– Electrical resistivity and dielectric permittivity mapping using an electrostatic survey device. GPR delineation of probable ancient anchor point the bridge. Combination surveys for urban archaeology.