Microbatteries with dimensions of tens to hundreds of micrometers that are produced by common microfabrication techniques are poised to provide integration of power sources onto electronic devices, but they still suffer from poor cycle lifetime, as well as power and temperature range of operation issues that are alleviated with the use of supercapacitors. There have been a few reports on thin-f...

An activated carbon supported α-molybdenum carbide catalyst (α-MoC1-x/AC) showed remarkable activity in the selective deoxygenation of guaiacol to substituted mono-phenols in low carbon number alcohol solvents. Combined selectivities of up to 85% for phenol and alkylphenols were obtained at 340 °C for α-MoC1-x/AC at 87% conversion in supercritical ethanol. The reaction occurs via consecutive de...

By means of the density functional theory calculations, two C88(D2:35)-based endohedral fullerenes, Lu3C2@C88(D2:35) and Lu3N@C88(D2:35) which encapsulate tri-lutetium carbide and tri-lutetium nitride cluster were investigated. For the cores in Lu3C2@C88 and Lu3N@C88, the trivalent C2 and N respectively template a butterfly-shaped endohedral moiety and a planar tri-lutetium cluster within the s...

We demonstrate a silicon carbide (SiC) microdisk resonator with an intrinsic optical quality factor of 6.19×10(3), fabricated on the 3C-SiC-on-Si platform. We characterize the temperature dependence of the cavity resonance and obtain a thermo-optic coefficient of 2.92×10(-5)/K for 3C-SiC. Our simulations show that the device exhibits great potential for cavity optomechanical applications.

The potential of Silicon Carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. In fact, the first SiC neutron detector was demonstrated more than fifty years ago (Babcock, et al., 1957; Babcock & Chang, 1963). This detector was shown to be operational in limited testing at temperatures up to 700 oC. Unfortunately, further development was limited by the poo...

Abstract—This paper presents a model to predict the depth of penetration in polycrystalline ceramic material cut by abrasive waterjet. The proposed model considered the interaction of cylindrical jet with target material in upper region and neglected the role of threshold velocity in lower region. The results predicted with the proposed model are validated with the experimental results obtained...

Unknown quantum electronic conductance across nanojunctions made of silicon-doped carbon wires between carbon leads is investigated. This is done by an appropriate generalization of the phase field matching theory for the multi-scattering processes of electronic excitations at the nanojunction and the use of the tight-binding method. Our calculations of the electronic band structures for carbon...

We report the discovery of a new hexagonal Mo2Ga2C phase, wherein two Ga layers – instead of one – are stacked in a simple hexagonal arrangement in between Mo2C layers. It is reasonable to assume this compound is the first of a larger family.

At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates...