نتایج جستجو برای: amorphous film
تعداد نتایج: 114036 فیلتر نتایج به سال:
The authors demonstrate an optical manipulation mechanism of gas bubbles for microfluidic applications. Air bubbles in a silicone oil medium are manipulated via thermocapillary forces generated by the absorption of a laser in an amorphous silicon thin film. In contrast to previous demonstrations of optically controlled thermally driven bubble movement, transparent liquids can be used, as the th...
We report torque magnetometry measurements of an oxide heterostructure consisting of an amorphous Al2O3 thin film grown on a crystalline SrTiO3 substrate (a-AO/STO) by atomic layer deposition. We find a torque response that resembles previous studies of crystalline LaAlO3/SrTiO3 (LAO/STO) heterointerfaces, consistent with strongly anisotropic magnetic ordering in the plane of the interface. Unl...
Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 C. The highest field effect mobility was 13 cm/V s with on-to-off ratios of drain current 10–10. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel l...
Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated transistor a major improvement in stability is obtained. This occurs because the electron quasi-Fermi level is pinned near the center of the band ...
The ultrasmoothness of diamond-like carbon coatings is explained by an atomistic/continuum multiscale model. At the atomic scale, carbon ion impacts induce downhill currents in the top layer of a growing film. At the continuum scale, these currents cause a rapid smoothing of initially rough substrates by erosion of hills into neighboring hollows. The predicted surface evolution is in excellent ...
ZnOfilmswith thickness of 80 nmwere grownbypulsed laser deposition (PLD) onMgO (100) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnOsingle crystalwereperformedby slowpositron implantation spectroscopy (SPIS). Itwas found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreo...
Articles you may be interested in Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm 2 / V s for electrons and 0.1 cm 2 / V s for holes Appl. Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys Appl. Effect o...
Related Articles Formation of nanoscale magnetic bubbles in ferromagnetic insulating manganite La7/8Sr1/8MnO3 Appl. Phys. Lett. 101, 162401 (2012) The evolution of magnetic domain structure with magnetic history in amorphous film with perpendicular anisotropy J. Appl. Phys. 112, 073913 (2012) Magnetic properties of current-annealed amorphous thin films J. Appl. Phys. 112, 053910 (2012) Crossove...
Silicon heterojunction solar cells have high opencircuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (aSi:H) layers deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ plasma diagnostics and ex-situ film characterization, we show that the best a-Si:H films for passivation are produced from deposition regimes clo...
Evolution of the Ti/a-GelSi trilayer reactions has been investigated using transmission electron microscopy and Auger electron spectroscopy. Instead of amorphous phase formation, as usually observed in the Ti/Si bilayer reaction, the crystalline Ti,GeS is the first phase observed during the reaction. Preceding the equilibrium C5CTi(Si,Ge),, a substitutional solid solution type C49-Ti(Si,Ge), fo...
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