Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In o...

A simple semi-empirical compact MOSFET model has been developed, which is called MIT virtual source (MVS) model. Compare to other model used in industry, MVS model requires only a few parameters, most of which can be directly obtained from experiment, and produce accurate results. One aim of this paper is to test the applicability of the MVS model to transistor made from MoS2 rather than silico...

An investigation of non-linear ballistic transport is being conducted, two device structures are investigated, a ballistic deflection transistor and a t-junction device. The transistor structure demonstrates a novel device that produces large small-signal gains in excess of 150. The t-junction structure was used to investigate the impact of ballistic transport versus upper valley transfer. A ba...

We report the realization of electrical coupling between neurons and depletion type floating gate (FG) p-channel MOS transistors. The devices were realized in a shortened 0.5 microm CMOS technology. Increased boron implant dose was used to form the depletion type devices. Post-CMOS processing steps were added to expose the devices sensing area. The neurons are coupled to the polycrystalline sil...

Field-effect transistor biomolecular sensors based on low-dimensional nanomaterials boast sensitivity, label-free operation and chip-scale construction. Chemical vapour deposition graphene is especially well suited for multiplexed electronic DNA array applications, since its large two-dimensional morphology readily lends itself to top-down fabrication of transistor arrays. Nonetheless, graphene...

Abstract Reliability and controllability for a new scheme of gate-all-around field effect transistor (GAA-FET) with silicon channel utilizing sectorial cross section is evaluated in terms Ion/Ioff current ratio, transconductance, subthreshold slope, threshold voltage roll-off, drain induced barrier lowering (DIBL). In addition, the scaling behavior electronic figures merit comprehensively studi...

Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid base voltage. The active semiconductor of the transistor is poly 3-hexylthiophene . Yellow poly para-phenylene vinylene derivative is used as the yell...

High frequency models of transistors are of interest because they have applications to computeraided design of high frequency circuits. When these models are derived, a problem encountered is that measured transistor S-parameters do not agree with the hybrid-π model. In this article, a simplified method is described to obtain an optimized classical hybrid-π model that predicts the measured S-pa...

A method for collapsing the transistor chain of CMOS gates to a single equivalent transistor is introduced. The width of the equivalent transistor is calculated taking into account the operating conditions of each transistor in the structure, resulting in very good agreement with SPICE simulations. Second order effects such as carrier velocity saturation in submicron devices, body effect and co...