two potassium oxalate doped tio2 samples, designated as k1-tio2 and k2-tio2, were synthesized by the base-catalyzed sol-gel process. these samples were impregnated into rubber sheets. two commercial tio2 samples, anatase and degussa p25, were used as reference materials with which the synthesized samples were to be compared. anatase and p25 were also impregnated into rubber sheets and designate...

Titanium-based alloys have gained worldwide application over the past century. However, their low wear resistance remains an unresolved challenge for Ti6Al4V alloy, which has significant industrial use. Therefore, it is integral part in material selection and surface treatment friction-wear applications. Tribological properties are not only parameters but also system where test conditions essen...

The diffusion barrier properties of HfNx and Hf–Ge–N thin films for Cu metallization on Ge are examined. The diffusion barrier films were deposited by reactive sputtering on p-Ge 001 single crystal substrates with varying thicknesses. Cu thin films were then deposited in situ on the diffusion barrier. The multilayer film structure was subsequently annealed in an Ar atmosphere. X-ray diffraction...

Protective ultra-thin barrier films gather increasing economic interest for controlling permeation and diffusion from the biological surrounding in implanted sensor and electronic devices in future medicine. Thus, the aim of this work was a benchmarking OPEN ACCESS Coatings 2013, 3 269 of the mechanical oxygen permeation barrier, cytocompatibility, and microbiological properties of inorganic ~2...

We have built and characterized batch-processed polarization beam splitters (PBS), important optical components to separate the orthogonal TE and TM components of light. The devices were fabricated from thin-film, low-stress silicon nitride membranes and showed excellent performance. By stacking membranes, and a triple-layer PBS produced extinction ratios of 21 and 16dB for reflected and transm...

X-ray photoelectron spectroscopy (XPS) technique has been used to study carefully prepared oxide-free titanium nitride (TiN) films of nearly identicd stoichiometry, grown by direct sputtering and reactive evaporation. The lineshapes and pe~ positions of the Ti 2p and N 1s transitions are dependent upon the deposition method. The XPS results showed that oxynitrides me present following exposure ...

In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with...