A novel approach for replacing mechanical probes used for wafer level testing with an optical contactless method for the application and extraction of test vectors from advanced silicon integrated circuits (ICs) is described. Experimental results demonstrate its feasibility, using a novel silicon light-emitting diode (LED) and silicon light sensors fabricated on the IC. The proposed method uses...

The paper deals with the measurement of the radius of curvature of silicon wafer surface. The aim of these measurements was to determine stresses generated during oxidation of silicon wafers. A greater molar volume of SiO2 layer in relation to the substrate material causes changes in the shape of oxidized surface, which results in stresses in both silicon dioxide layer and silicon. These change...

Integrated freestanding single-crystal silicon nanowires with typical dimension of 100 nm × 100 nm × 5 µm are fabricated by conventional 1:1 optical lithography and wet chemical silicon etching. The fabrication procedure can lead to wafer-scale integration of silicon nanowires in arrays. The measured electrical transport characteristics of the silicon nanowires covered with/without SiO(2) suppo...

Silicon Carbide (SiC) Power Devices have emerged as a breakthrough technology for wide range of applications in the frame high-power electronics, notably 600 to 3,300V. The last decades shown continuous and impressive improvement both 4H-SiC wafer size quality. Nevertheless, availability such wafers remains challenge SiC power industry. In three years, Soitec has successfully adapted Smart Cut™...

The BABAR Silicon Vertex Tracker (SVT) is a five-layer double-sided silicon detector designed to provide precise measurements of the position and direction of primary tracks, and to fully reconstruct low-momentum tracks produced in ee collisions at the PEP-II asymmetric collider at Stanford Linear Accelerator Center. This paper describes the design, implementation, performance, and validation o...

Here we experimentally demonstrate room temperature, continuous-wave (CW), 2.0 μm wavelength lasers heterogeneously integrated on silicon. Molecular wafer bonding of InP to Si is employed. These hybrid silicon lasers operate CW up to 35°C and emit up to 4.2 mW of single-facet CW power at room temperature. III-V tapers transfer light from a hybrid III-V/silicon optical mode into a Si waveguide m...

In this paper, we first report a micropump actuated by surface tension based on continuous electrowetting (CEW). We have used the surface-tension-induced motion of a mercury drop in a microchannel filled with an electrolyte as actuation energy for the micropump. This allows low voltage operation as well as low-power consumption. The micropump is composed of a stack of three wafers bonded togeth...

Second-order optical nonlinear effects (second-harmonic and sum-frequency generation) are demonstrated in the telecommunication band by periodic poling of thin films of lithium niobate wafer-bonded on silicon substrates and rib-loaded with silicon nitride channels to attain ridge waveguide with cross-sections of ~2 µm2. A nonlinear conversion of 8% is obtained with a pulsed input in ...

This study analyses the in uence of the argon ow on the Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon oxide thin lms by using TEOS as silicon source. The argon ow increases the deposition rate, however it also can creates some defects in the deposited lm. Several characterization techniques were used to analyze the deposited lms. The presence of argon, in the gas phase, modi es t...