iii Populärvetenskaplig sammanfattning v Preface vii Contributions xi Abbreviations xiii Acknowledgments xv

This project involves the design of a CMOS RF RMS Detector that converts the RMS voltage amplitude of an RF signal to a DC voltage. Its high input impedance and small area make it suitable for the built-in-testing of critical RF blocks of a transceiver such as a Low Noise Amplifier (LNA) and Power amplifier (PA) without affecting their performance and with minimum area overhead. DESCRIPTION: Th...

A charge conserving small-signal equivalent circuit with very simple and accurate parameter extraction method for a three-terminal CMOS RF model is presented. We found that significant errors in circuit performances can be obtained if charge conserving non-reciprocal capacitances are not properly considered. It is also found that one accurate large-signal I-V model is enough to be used for DC, ...

This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertion loss and isolati...

Wafer-level packaging (WLP) technology offers novel opportunities for the realisation of highquality on-chip passives needed in RF front-ends. IMEC proposes thin-film WLP technology in combination with 90nm CMOS as a cost-effective approach to integrate RF and microwave systems. The potential of this technology is assessed by means of two demonstrator sub-circuits: a low-power voltage-controlle...

A radio-frequency transceiver chip was designed in a UMC RF 0.18 μm CMOS process. The target RF frequency is 2.4 GHz ISM band. The specifications are a sensibility of -60 dBm and a power transmission of 0 dBm. The power supply of the transceiver is 1.8 V. Simulations show a power consumption of 10.7 mW. Innovative topics concerning efficient power management was taken into account during the de...

An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies have been implemented a CMOS 65-nm technology: one based classical common-source (CS) choke inductor another complementary current-reuse (CR) circuit, both them producing ...

In this paper, we propose a new way of implementing on-chip global interconnect that would meet stringent challenges of coreto-core communications in latency, data rate, and reconfigurability for future chip-microprocessors (CMP) with efficient area and energy overheads. We discuss the limitation of traditional RC-limited interconnects and possible benefits of multi-band RF-interconnect (RF-I) ...

In this study, we introduce a zero-IF sub-harmonic mixer with high isolation in the 5GHz band using 0.18μm CMOS technology. Placing an LC-Tank between the class AB stage and the mixer core improves the isolation between the LO and RF ports. The measured isolation is obtained with a 48 dB between LO and RF ports; and a 9.5dB conversion gain is acquired while consuming 7mA at 2.5V supply voltage....

High performance RF switches are among the key building blocks required in modern wireless communication systems. Switches that provide low insertion loss, high isolation between ports, low distortion and low current consumption are much sought after for high frequency applications such as phase shifters, switchable filters, transmitters and receivers for radar systems—ranging from large instal...