A digital timing method aiming to minimize the time walk caused by the depth-dependent pulse shape variations in CdTe detectors has been developed. Detector pulses are digitized at the preamplifier stage and a full digital process is carried out to deduce and correct the time walk according to the interaction depth. A time resolution of 6.52 ns FWHM at an energy threshold of 150 keV with a CdTe...

We introduce a finite difference discretization of semiconductor drift-diffusion equations using cylindrical partial waves. It can be applied to describe the photo-generated current in radial pn-junction nanowire solar cells. We demonstrate that the cylindrically symmetric (l = 0) partial wave accurately describes the electronic response of a square lattice of silicon nanowires at normal incide...

A low voltage all silicon microdisplay is presented based on MOS-like gate-control all-Silicon light-emitting diode (LED) in standard 0.18 ?m complementary metal oxide semiconductor (CMOS) technology. The LED designed under a PN alternate structure with polysilicon gate control electrode for high luminous intensity and operating voltage. device fabricated the as pixel units. size of proposed 6....

We present parallel single molecule detection (SMD) and fluorescence correlation spectroscopy (FCS) experiments with a fully integrated complementary metal oxide semiconductor (CMOS) single-photon 2x2 detector array. Multifocal excitation is achieved with a diffractive optical element (DOE). Special emphasis is placed on parallelization of the total system. The performance of the novel single-p...

Mid-infrared detectors that are sensitive only in a tunable narrow spectral band are presented. They are based on the Resonant Cavity Enhanced Detector (RCED) principle and employing a thin active region using IV-VI narrow gap semiconductor layers. A Fabry-Pérot cavity is formed by two mirrors. The active layer is grown onto one mirror, while the second mirror can be displaced. This changes the...

The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in sensor depleted region, was tested beam 180 GeV pions at CERN SPS. features low noise and fast SiGe BiCMOS frontend electronics hexagonal pixels 100 {\mu}m pitch. At bias voltage 125 V, provides full efficiency average time resolution 30, 25 17 ...

Avalanche Photodiodes (APDs) connected with quenching circuits can be used for single photon detection. This semiconductor photon detector has a better performance than photomultiplier. The principles and applications of APDs are presented. Features, performance of different commercial devices are introduced and compared. Recent research progress based on the improvement of quenching circuits a...

Gamma-ray imaging with position-sensitive germanium detectors offers the advantages of excellent energy resolution, high detection efficiency, and potentially good spatial resolution. The development of the amorphous-semiconductor electrical contact technology for germanium detectors has simplified the production of these position-sensitive detectors and has made possible the use of unique dete...

A CMOS (complementary metal-oxide semiconductor) flatpanel X-ray detector is a two-dimensional silicon image sensor with a scintillator. We have tested the performance of two types of CMOS detectors in simultaneous small-angle/wideangle X-ray scattering experiments. Both are active-pixel devices that have an amplifier in each pixel. Wide-angle patterns were recorded with the detector just behin...