Nanoimprint lithography (NIL) has been successfully employed in nanoscale patterning, however, it is known to have limitations in replicating large-scale (hundreds of microns and larger) and nanoscale patterns simultaneously. In this letter, we present a novel lithographic technique that integrates photolithography into the NIL patterning process. This technique uses a hybrid mask-mold that has...

Optical imaging and photolithography promise broad applications in nano-electronics, metrologies, and single-molecule biology. Light diffraction however sets a fundamental limit on optical resolution, and it poses a critical challenge to the down-scaling of nano-scale manufacturing. Surface plasmons have been used to circumvent the diffraction limit as they have shorter wavelengths. However, th...

Some of the key components are demonstrated to make three-dimensional (3-D) optical integrated circuits possible using polymers. Fabrication techniques of shadow reactive ion etching, shadow photolithography, and gray-level photolithography to produce complex 3-D integrated optic structures are demonstrated. Vertical waveguide bends exhibit excess losses of <0.3 dB, and vertical power splitters...

Resolution enhancement in far-field photolithography is demonstrated using a plasmonic metamask in the proximity regime, in which Fresnel diffraction is dominant. The transverse magnetic component of the diffracted wave from the photomask, which reduces the pattern visibility and lowers the resolution, was successfully controlled by coupling with the anti-symmetric mode of the excited surface p...

Advanced photolithography developed for the semiconductor industry has been used to fabricate interdigitated microelectrode arrays that pass steady-state limiting currents of up to 230 nArmM analyte — 2.5 times more than the most sensitive interdigitated array built to date, and exhibit response times of ;5 ms. This performance results from the small interelectrode gap and the large active area...

A major technical hurdle in microfluidics is the difficulty in achieving high fidelity lithographic patterning on polydimethylsiloxane (PDMS). Here, we report a simple yet highly precise and repeatable PDMS surface micromachining method using direct photolithography followed by reactive ion etching (RIE). Our method to achieve surface patterning of PDMS applied an O(2) plasma treatment to PDMS ...

Quasi-planar tri-gate (QPT) bulk metal-oxidesemiconductor field-effect transistors (MOSFETs) are fabricated by a low-power 28-nm complementary metal-oxide-semiconductor (CMOS) technology, in order to investigate the effect of double-patterning and double-etching (2P2E) on the line-edge-roughness (LER) as well as on the LER-induced threshold-voltage (VTH) variation. We experimentally verified th...