نتایج جستجو برای: narrow band gap semiconductor

تعداد نتایج: 360555  

2002
M. J. Gilbert J. P. Bird T. Sugaya R. Akis

We develop a simple analytical model to study the influence of different material systems on the operation of a quantum-point-contact spin filter. Such a device has been predicted to allow for local control of the spin polarization in a semiconductor, and for direct electrical detection of the induced spin polarization. Narrow band-gap semiconductors, such as InAs and InSb, are predicted to exh...

2016
Jun Young Choi Keun Heo Kyung-Sang Cho Sung Woo Hwang Sangsig Kim Sang Yeol Lee

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies c...

2017
J. C. Prestigiacomo A. Nath M. S. Osofsky S. C. Hernández V. D. Wheeler S. G. Walton D. K. Gaskill

Since its discovery, graphene has held great promise as a two-dimensional (2D) metal with massless carriers and, thus, extremely high-mobility that is due to the character of the band structure that results in the so-called Dirac cone for the ideal, perfectly ordered crystal structure. This promise has led to only limited electronic device applications due to the lack of an energy gap which pre...

2016
Baohe Yuan Qi Xu Linfei Liu Xiying Ma

The influences of the filling rate on the photonic band gap properties of the two dimensional hex photonic crystals are investigated using the finite-difference time-domain method. When the filling rate f varies from 0.227 to 0.735 reminding the refractive index as 5, the number of the photonic band gaps decreases from 5 to 2 bands, the width of the photonic band gap between the transmit peaks ...

Journal: :Nanoscale 2015
Tu Hong Bhim Chamlagain Tianjiao Wang Hsun-Jen Chuang Zhixian Zhou Ya-Qiong Xu

We investigate the photocurrent generation mechanisms at a vertical p-n heterojunction between black phosphorus (BP) and molybdenum disulfide (MoS2) flakes through polarization-, wavelength-, and gate-dependent scanning photocurrent measurements. When incident photon energy is above the direct band gap of MoS2, the photocurrent response demonstrates a competitive effect between MoS2 and BP in t...

2006
S.-P. Gorza D. Taillaert R. Baets B. Maes Ph. Emplit M. Haelterman

We fully characterize the stationary spatial-gap soliton through the measurement of the phase function of its nearly periodic transverse intensity distribution. The spatial-gap soliton is generated in one-dimensional photonic crystal consisting of a corrugated semiconductor planar optical waveguide. The measured phase function allows us to determine the detuning parameter that provides the posi...

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