This paper presents a four-quadrant multiplier based on square-law characteristic of floating gate MOSFET (FGMOS) in saturation region. The proposed circuit uses square-difference identity and the differential voltage squarer proposed by Gupta et al. to implement the multiplication function. The proposed multiplier employs eight FGMOS transistors and two resistors only. The FGMOS implementation...

In this paper, we implement a circuit topology for the gold standard ATX80+.The total output power is 255 watts under full load operation. An active-clamping ZVS forward converter is adopted to provide main power and in secondary side, the BUCK circuit technology is adopted to provide 3 sets power +12V, +5V and +3.3V. To eliminate the current harmonics and to achieve high power factor, an activ...

Circuit sizing problem in application specific analog integrated circuit design is in most cases limited to setting MOSFET channel widths and lengths. It is usually performed by hand by an experienced human designer. As the circuit sizing is an optimization process by its nature, optimization methods could be used. They always lead to one of the minima of the cost function while eventual other ...

In this paper, a new current mode true RMS-to-DC converter circuit using second generation current conveyors (CCII) is presented. The second generation current conveyor employs MOSFET transistors that are operating in strong inverted saturation region. The proposed methodology provides the following advantages: a complete current-mode circuit makes it suitable for current-mode signal processing...

Short channel MOSFET devices have been fabricated using a commercial 0.25 μm CMOS process and characterized at cryogenic temperatures for further application in hybrid superconductor-CMOS circuits. A 4 K device model has been established through modifying the room temperature CMOS model by taking into account the parameter variation of the discrete MOS devices at cryogenic temperature. We have ...

channel effects are included in the model. In this model, charge conservation holds and channel charge partitioning are properly treated. The simulation results clearly show the importance of 2-11 field-induced effects to short-channel MOS devices. Comparison of the simulated results with reported experimentally measured data shows that the proposed model is far more reliable than the analytica...

A low-power CMOS current reference circuit was developed using a 0.35-μm standard CMOS process technology. The circuit consists of MOSFET circuits operating in the subthreshold region and uses no resistors. It compensates for the temperature effect on mobility μ and threshold voltage VTH of MOSFETs and generates a reference current that is insensitive to temperature and supply voltage. Theoreti...

In this paper the method of sensorless startup of direct current brushless motor using third harmonic back Electromotive Force (EMF) and motor startup using microcontroller for pulse width modulation, power switch control and motor output analysis is presented which renders RPM control and high speed achievement for motor. The microcontroller is used for processor and MOSFETs are used for power...

A threshold voltage (VT0) monitor is a circuit that ideally delivers the estimated VT0 value as a voltage at its output, for a given temperature range, without external biases, parametric setups, curve fitting or any subsequent calculation. It can be used in temperature sensors, voltage and current references, radiation dosimeters and other applications since the MOSFET VT0 dependence on the op...

Abstract With the increasing shortage of traditional energy resources, new resources such as fuel cells are widely used. However, front-end output voltage power generation systems is low, which cannot directly supply to load. Therefore, an efficient DC converter with a high boost ratio needed raise required level. The staggered parallel has characteristics small input current ripple and gain, v...