نتایج جستجو برای: microwave field effect transistor
تعداد نتایج: 2380861 فیلتر نتایج به سال:
A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming ...
We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performa...
The Field Effect Transistor using nanotechnology is known as Carbon Nanotube Field Effect Transistors (CNTFET). Which promising nano-scaled devices for implementing high performance very dense and low power circuits. A Carbon Nanotube Field Effect Transistor refers to a FET with a single CNT or an array of CNT's as the channel material instead of bulk silicon in the traditional MOSFET structure...
We report a nanofluidic transistor based on a metal-oxide-solution (MOSol) system that is similar to a metal-oxide-semiconductor field-effect transistor (MOSFET). Using a combination of fluorescence and electrical measurements, we demonstrate that gate voltage modulates the concentration of ions and molecules in the channel and controls the ionic conductance. Our results illustrate the efficacy...
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