Due to the high surface to volume silicon ratio and unique quasi onedimensional electronic structure, silicon nanowire based devices have properties that can outperform their traditional counterparts in many ways. To fabricate silicon nanowires, in principle there are a variety of different approaches. These can be classified into top-down and bottom-up methods. The choice of fabrication method...

The relationship of drain induced barrier lowering (DIBL) phenomenon and channel length, silicon thickness, thicknesses top bottom gate oxide films is derived for asymmetric junctionless double (JLDG) MOSFETs. characteristics between the current voltage by using potential distribution model to propose in this paper. In case, threshold defined as corresponding when (W/L) × 10-7 A, DIBL represent...

In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. phenomenon, heavy ion produces series electron-hole pairs along incident track, and then generated transient current can overturn logical state device when number large enough. single-particle DMG-GDS-HJLTFET, carried ene...

Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are pr...