∗Université de Grenoble; Laboratoire Jean Kuntzmann, (umr CNRS 5224, Grenoble INP, INRIA, UJF, UPMF); [email protected]; 51, rue des Mathématiques, BP 53X, F-38041 Grenoble, France. †INRIA, Université de Grenoble; Laboratoire LIG (umr CNRS 5217, Grenoble INP, INRIA, UJF, UPMF); [email protected]; ENSIMAG Antenne de Montbonnot, 51, avenue Jean Kuntzmann, F-38330 Montbonnot Saint-...

A large signal device model is developed for type-II InP/GaAsSb/InP devices that is based on the UIUC Type-I SDD model. The model accurately characterizes a balanced 480/420 GHz fT/fMAX device, and is used to design and simulate a 200 GHz static frequency divider.

Indium belongs to Group III A in the periodic table and it is mainly used in the making of thin-film transistor liquid crystal displays (LCDs) for television screens, portable computer screens, pocket telephone displays and video monitors, mainly through the utilization of indiumtin oxide (ITO). ITO is a sintered alloy containing a large portion of indium oxide and a small portion of tin oxide....

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosph...

TECHNOLOGY In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The MBE grown InP-based DHBTs with an emitter area of 1 × 4 μm exhibited peak cutoff frequencies (fT and fMAX) > 300 GHz, and a breakdown voltage (BVCEo) of ~ 5 V. The InP DHBT layer structures were grown on 3” semiinsulating InP substrat...

Precise control of the doping in the p-type semiconductor layers is important for fabrication of integrated optoelectronic structures. Zinc is a common p-type dopant used in InP-InGaAsP and InP-InGaAlAs systems grown by MOVPE. For example, Zn-doped InP with the carrier concentration more than 18 3 10 cm is widely used as ptype cladding layer on top of the adjacent undoped active region of the v...

Radiative corrections to QCD amplitudes in the quasi-multi-Regge kinematics are interesting in particular since the Reggeized form of these amplitudes is used in the derivation of the NLO BFKL. This form is a hypothesis which must be at least carefully checked, if not proved. We calculate the radiative corrections in the one-loop approximation using the s-channel unitarity. Compatibility of the...

Y. Altmann, N. Brun , N. Dobigeon , K. March, S. Moussaoui, O. Schneegans 1School of Engineering and Physical Sciences, Heriot-Watt University Earl Mountbatten Building, Riccarton, EH14 4AS, Edinburgh, U.K. Laboratoire de Physique des Solides, CNRS UMR 8502, Univ. Paris-Sud, Univ. Paris-Saclay Bât. 510, 91405 Orsay Cedex, France University of Toulouse, IRIT/INP-ENSEEIHT/TéSA 2 rue Charles Camic...

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