The literature on the application of Multispectral and Hyperspectral imaging for identification of pigments on artworks is sparse. While these methods do not provide the analytical capability that spectroscopies do offer, the use of spectral imaging has the advantage of being a rapid and relatively low-cost solution for the examination of large areas. This paper presents a flowchart for the ide...

: We report photoreflectance (PR) and photoluminescence (PL) investigations of the electronic and polarization properties of different aspect ratio (height/diameter) InGaAs quantum rods (QRs) embedded in InGaAs quantum wells (QWs). These nanostructures were grown by molecular beam epitaxy using As2or As4sources. The impact of the As source on the spectral and polarization features of the QR- an...

In this paper, we propose an analytical approach for the small-signal response of nanometric InGaAs diode which is extracted to the transistor model in ref [1] when the gate is taking away. The exploitation of the small-signal equivalent circuit elements such as the admittance parameters can give significant information about the noise level of the devices by using the Nyquist relation. The ana...

We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The intermetallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction...

Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting a blueshift of 15 meV, a narrowing of the linewidth (full width at half maximum, FWHM) from 20.3 to 10 meV...

Characteristic temperature coefficients of the threshold current ( 0) and the external differential quantum efficiency ( 1) are studied as simple functions of the temperature dependence of the physical parameters of the semiconductor lasers. Simple expressions of characteristics temperature coefficients of the threshold current ( ) and the external differential quantum efficiency ( 1) are expre...

Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a ...

We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.7...