A CMOS-based MEA with 4225 recording sites and 1024 stimulation sites is used to achieve high spatiotemporal resolution in in-vitro neural tissue interfacing experiments. Active area is 1 mm × 1 mm or 2 mm × 2 mm, respectively. A thin high-k dielectric serves as sensor interface between solid-state chip and biology.

Understanding subcritical fracture of low-k dielectric materials and barrier thin films in buffered solutions of different pH value is of both technical and scientific importance. Subcritical delamination of dielectric and metal barrier films from low-k organosilicate glass (OSG) films in pH buffer solutions was studied in this work. Crack path and subcritical fracture behavior of OSG depends o...

ing dielectric permittivity and loss tangent of embedded passive materials. The measurements are made in an APC-7 coaxial configuration where the test specimen represents a load terminating an air-filled coaxial transmission line. The method is suitable for testing high dielectric constant (high-k) polymer-composite materials having nominal thickness of 1 μm to 300 μm at frequencies of 100 MHz ...

structures Jia-Liang Le, Zdeněk P. Bažant, and Martin Z. Bazant Department of Civil and Environmental Engineering, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA Department of Materials Science, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA Department of Chemical Engineering and Department of Mathematics, Massachusetts Institute of Techno...

Dielectric elastomer is one of the new types electronic materials that have both drive ability and electric generating capacity. In this research, fundamental tests were performed to evaluate abilities of dielectric elastomer. As the result, it was found that dielectric elastomer had very efficient drive ability and electric generating capacity, and that it was applicable to both slow and high ...

We present a brief overview of Positive Bias Temperature Instability (PBTI) commonly observed in n-channel MOSFETs with SiO2/HfO2/TiN dual-layer gate stacks when stressed with positive gate voltage at elevated temperatures. We review the origin and present understanding of the characteristics of oxide traps that are responsible for the complex behavior of threshold voltage stability. We discuss...

The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-j dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-j dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characteriza...

High-k gate dielectrics are used to suppress excessive transistor gate leakage and power consumption could speed up the introduction of metal gates in complementary metal oxide semiconductor (CMOS) transistors. Many new oxides are being evaluated as gate dielectrics, such as Al2O3, Y2O3, La2O3, Gd2O3, HfO2, ZrO2, and TiO2, BaZrO3, ZrSiO4 and HfSiO4. Ru, RuO2 and SrRuO3 gate electrodes grown on ...

Problem statement: The some optical constants polymer thin film with red dye 3-amino-7dimethylamino-2-methyl phenazine (NR) as the guest material and Polyvinylpyrrolidone (PVP) as the host material were prepared by adulteration and spin-coating methods. Approach: The values of some important parameters (refractive index n, extinction coefficient K and dielectric constant ε∞) of polymer thin fil...

F. Wiesinger, P-F. Van de Moortele, G. Adriany, N. De Zanche, C. Snyder, T. Vaughan, K. Ugurbil, K. P. Pruessmann Institute for Biomedical Engineering, ETH and University Zurich, Zurich, Switzerland, Center for MR Research (CMRR), University of Minnesota, Minneapolis, Minnesota, United States INTRODUCTION: Ultra-high field strengths and parallel imaging are expected to form a considerable syner...