We present the initial results of the first germanium strip detector array for the imaging and high-resolution spectroscopy of gamma-ray sources. The array consists of four detectors, 5 x 5 x 1 cm each with 25 strips on each side. The detectors are daisy-chained to hybrid preamplifiers to reduce the number of channels of electronics. Good spectroscopy and imaging are achieved. We also present r...

Within the quest for direct band-gap group IV materials, strain engineering in germanium is one promising route. We present a study of the strain distribution in single, suspended germanium nanowires using nanofocused synchrotron radiation. Evaluating the probed Bragg reflection for different illumination positions along the nanowire length results in corresponding strain components as well as ...

The germanide Ce2Rh3Ge5 was synthesized from the elements in a bismuth flux, and the structure was refined from single-crystal X-ray diffractometer data: U2Co3Si5 type, Ibam, a = 1010.1(2), b = 1210.4(2), c = 599.1(1) pm, wR = 0.0596, 760 structure factors, 31 variables. The rhodium and germanium atoms build up a three-dimensional [Rh3Ge5] network (242 – 269 pm Rh–Ge; 300 pm Rh–Rh; 266 pm Ge–Ge...

We propose two designs of nanoscale sub-fF germanium photodiodes which are efficiently integrated with silicon waveguides. The metal-optic cavities are simulated with the finite difference time domain method and optimized using critical coupling concepts. One design is for a metal semiconductor metal photodiode with <200 aF capacitance, 39% external quantum efficiency, and 0.588 (λ/n)³ cavity v...

germanium on silicon platform L. Shen, N. Healy, C. J. Mitchell, J. S. Penades, M. Nedeljkovic, G. Z. Mashanovich and A. C. Peacock Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, United Kingdom Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China c...

We have investigated the properties of thin copper and germanium layers in view of their use in microstrip gas chambers. It was found that ultra thin germanium layers with thicknesses of about 100 A provide surface resistivities in the order of 10 11 {10 14 /2. Such layers evaporated onto the micro structure of microstrip gas chambers manufactured on plastic or glass supports lead to a gain sta...

Group-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries. Over the last two decades of research, their potential for application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challeng...

Mid-infrared photonics in silicon needs low-loss integrated waveguides. While monocrystalline germanium waveguides on silicon have been proposed, experimental realization has not been reported. Here we demonstrate a germanium strip waveguide on a silicon substrate. It is designed for single mode transmission of light in transverse magnetic (TM) polarization generated from quantum cascade lasers...

We compute the scattering rates for the lightest neutralino χ1 in the forthcoming germanium (73Ge+76Ge) detector and a proposed lead detector (207Pb), within the framework of SU(5) × U(1) supergravity. We find that in only a small portion (<∼ 10%) of the parameter spaces of this class of models, are the rates in the germanium detector above the expected initial experimental sensitivity of 0.1 e...