نتایج جستجو برای: enhanced atomic layer deposition

تعداد نتایج: 767218  

2010
Burak Caglar Enric Bertran Eric Jover

Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique to obtain vertically densealigned carbon nanotubes (CNTs) at lower temperatures than chemical vapor deposition (CVD). In this work, we used magnetron sputtering to deposit iron layer as a catalyst on silicon wafers. After that, radio frequency (rf) assisted PECVD reactor was used to grow CNTs. They were treated with wate...

2005
Titta Aaltonen Markku Leskelä Mikko Ritala

3 Preface 4 List of publications 5 List of symbols and abbreviations 6

2015
Thiloka Chandima Ariyasena Priyanga Wijesinghe Shawn P. McElmurry

(I) CHROMATOGRAPHIC METHODS FOR SOLUTE DESCRIPTORDETERMINATIONS(II) RUTHENIUM SUBSTRATE-CATALYZED GROWTH OF NICKEL NITRIDETHIN FILMS BY ATOMIC LAYER DEPOSITION

2017
Yucheng Zhang Carlos Guerra-Nuñez Ivo Utke Johann Michler Piyush Agrawal Marta D. Rossell Rolf Erni

Controlled synthesis of a hybrid nanomaterial based on titanium oxide and single-layer graphene (SLG) using atomic layer deposition (ALD) is reported here. The morphology and crystallinity of the oxide layer on SLG can be tuned mainly with the deposition temperature, achieving either a uniform amorphous layer at 60 °C or ∼2 nm individual nanocrystals on the SLG at 200 °C after only 20 ALD cycle...

2015
Martin D. McDaniel Chengqing Hu Sirong Lu Thong Q. Ngo Agham Posadas Aiting Jiang David J. Smith Edward T. Yu Alexander A. Demkov John G. Ekerdt

Articles you may be interested in O 3-based atomic layer deposition of hexagonal La 2 O 3 films on Si(100) and Ge(100) substrates Atomic layer deposition of La x Zr 1 − x O 2 − δ (x = 0.25) high-k dielectrics for advanced gate stacks Appl. Suppressed growth of unstable low-k Ge O x interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor Appl....

Journal: :Chemistry 2016
Meihua Wang Zhe Gao Bin Zhang Huimin Yang Yan Qiao Shuai Chen Huibin Ge Jiankang Zhang Yong Qin

Metal-support interfaces play a prominent role in heterogeneous catalysis. However, tailoring the metal-support interfaces to realize full utilization remains a major challenge. In this work, we propose a graceful strategy to maximize the metal-oxide interfaces by coating confined nanoparticles with an ultrathin oxide layer. This is achieved by sequential deposition of ultrathin Al2 O3 coats, P...

2017
Shih-Yun Liao Ya-Chu Yang Sheng-Hsin Huang Jon-Yiew Gan

Pt@TiO2@CNTs hierarchical structures were prepared by first functionalizing carbon nanotubes (CNTs) with nitric acid at 140 °C. Coating of TiO2 particles on the CNTs at 300 °C was then conducted by atomic layer deposition (ALD). After the TiO2@CNTs structure was fabricated, Pt particles were deposited on the TiO2 surface as co-catalyst by plasma-enhanced ALD. The saturated deposition rates of T...

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