The combination of graphene and silicon in hybrid electronic devices has attracted increasing attention over the last decade. Here, a unique technology graphene-on-silicon heterostructures as solution-gated transistors for bioelectronics applications is presented. proposed field-effect (GoSFETs) are fabricated by exploiting various conformations channel doping dimensions. demonstrate behavior w...

In this report, the thermal performance of a hydrogen (H)-terminated diamond field-effect transistor (FET) is investigated using Raman spectroscopy and electrothermal device modeling. First, conductivity (κdiamond) active channel was determined by measuring temperature rise transmission line measurement structures under various heat flux conditions nanoparticle-assisted thermometry. Using appro...

Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices they can serve a synaptic device for neuromorphic implementation and one-transistor (1T) achieving high integration. Since the discovery of hafnium–zirconium oxide (HZO) with ferroelectricity (even at thickness several nanometers) that be fabricated by complementary metal–oxide–semiconductor-comp...

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We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbon...