In this paper we report on experimental results in solving defect-related issues limiting the size and performance of 4H-SiC based power Schottky diodes. Several techniques improving wafer quality were used in line to fabricate power Schottky diodes with high current capability for blocking voltage over 600 V. Results of X-ray investigation of wafers on every step of treatment from initial wafe...

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NAKAMURA. s.: ‘InGaN/AlGaN blue light emitting diodes’, J. Vac. Sci. Teclznol. A , 1995, 13, (3 ) , pt. I , pp. 705-710 NAKAMURA, S , SENOH, M , NAGAHAMA. S. , IWASA, N., YAMADA, T., MATSUSHITA. I., KIYOKU. H., and SUGIMOTO, Y : ‘InGaN-based multi-quantum-well-structure laser diodes’, Jpn. J. Appl. Pliys., 1996, 35, (le). pp. L74-L76 DMITRIbV, V.A.: ‘GaN based pn structures grown on Sic substra...

Tunnel diodes utilizing deep-levels in low-temperature-grown (LTG) gallium-arsenide (GaAs) are demonstrated. These tunnel diodes achieve peak-to-valley current ratios as high as 22, a record negative-conductance-per-area of 1/226 Xlm, and a record peak current density of 16 kA/cm, all at room-temperature. 2004 Elsevier Ltd. All rights reserved. PACS: 72.20.H; 73.50.F; 85.30.M; 71.55.E; 73.61.E;...

We propose a secure communication scheme based on anticipating synchronization of two chaotic laser diodes, one subject to incoherent optical feedback and the other to incoherent optical injection. This scheme does not require fine tuning of the optical frequencies of both lasers as is the case for other schemes based on chaotic laser diodes subject to coherent optical feedback and injection. O...

The first interferometric measurements of temporalcoherence length variation with numerical aperture (NA) are described for 650 nm, resonant-cavity light-emitting diodes (LEDs) agreeing with spectrally derived results. The interferometrically measured coherence length (22 m to 32 m) reduced by 37% for a 0.42 increase in NA. For a larger range of NA (0–1), this would give coherence lengths (10 m...

For networks containing resistors, independent sources, gyrators, ideal transformers, diodes and other saturating monotone piecewise linear resistors, a new condition is proposed to guarantee uniqueness of solutions. This is both necessary and sufficient and is easy to test. It requires that the characteristics should satisfy a condition with the null vectors of the matrix of the linear part of...

-------------------------------------------------------ABSTRACT--------------------------------------------------In this Paper an On chip High Voltage Generator with bulk CMOS process using Polysilicon Diodes is presented. As the polysilicon diodes are completely isolated from the bulk so the output voltage is not limited by the junction breakdown voltage of CMOS in charge pump circuit. The out...

This paper represents a novel second harmonic power combining oscillator using mutually synchronized Gunn diodes embedded on slot line resonators. A both-sided MIC technology is adopted in the oscillator. The oscillator consists of Gunn diodes, slot line resonators and microstrip lines. By embedding Gunn diodes on slot line resonators, desired harmonic RF signal can be generated very easily. Th...

On-chip ESD protection circuits realized with novel diode structures without the field-oxide boundary across the p/n junction are proposed. A PMOS (NMOS) is especially inserted into the diode structure to form the PMOS-bounded (NMOS-bounded) diode, which is used to block the field oxide isolation across the p/n junction in the diode structure. Without the field oxide boundary across the p/n jun...