It is known that conventional metal-oxide-silicon ~MOS! devices will have gate tunneling related problems at very thin oxide thicknesses. Various high-dielectric-constant materials are being examined to suppress the gate currents. In this article we present theoretical results of a charge control and gate tunneling model for a ferroelectric-oxide-silicon field effect transistor and compare them...

Dual Metal Gate (DMG) technology was proposed to reduce the short channel effects (SCE’s) of double gate MOSFETs. But, DMG alone is not enough to rectify the problem of gate tunneling current due to thinning of oxide layer with device downscaling. So, the use of high-k dielectric as gate oxide is considered to overcome the gate tunneling effect. But, high gate dielectric thickness leads to high...

In this paper, we attempt to understand the physico-chemical changes that occur in devices during device "burn-in". We discuss the use of low frequency dielectric spectroscopy to detect, characterize and monitor changes in electrical defects present in the dielectrics of through silicon vias (TSV) for three dimensional (3D) interconnected integrated circuit devices, as the devices are subjected...

A tunable fluid-loaded free-electron laser ~FEL! oscillator is demonstrated. This FEL-type experiment employs low-energy electrons, down to 0.4 keV. Therefore, it interacts with extremely long radio waves, in the VHF range (l.1 m). The device consists of a folded-foil planar wiggler (lW54 cm), and a double-stripline cavity. The variable dielectric loading is implemented by distilled water in gl...

We present cross-talk calculations for a subdiffraction nanophotonic waveguide that consists of a colloidal quantum dot (QD) array 10 nm in diameter and compare the results with conventional continuous dielectric waveguides, assuming the same 10 nm size as well as a 200 nm cutoff diameter for guided mode. We find that the QD cascade has much lower cross talk than 10 nm dielectric waveguides at ...

A comprehensive study on the ternary dielectric, LaGdO₃, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, resp...

Nanoscale resistive switching devices, sometimes termed memristors, have recently generated significant interest for memory, logic and neuromorphic applications. Resistive switching effects in dielectric-based devices are normally assumed to be caused by conducting filament formation across the electrodes, but the nature of the filaments and their growth dynamics remain controversial. Here we r...

In this study a coaxial line was used to connect a microwave-frequency Network Analyzer and a base moving sample holder for dielectric characterization of ferroelectric materials in the microwave range. The main innovation of the technique is the introduction of a special sample holder that eliminates the air gap effect by pressing sample using a fine pressure system control. The device was pre...

In spite of high piezoelectricity, only a few one-dimensional ferroelectric nano-materials with perovskite structure have been used for piezoelectric nanogenerator applications. In this paper, we report high output electrical signals, i.e. an open-circuit voltage of 3.2 V and a closed-circuit current of 67.5 nA (current density 9.3 nA cm(-2)) at 0.38% strain and 15.2% s(-1) strain rate, using r...

Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed by Cu etching and transfer to a target substrate. The growth rate of h-BN film at a constant temperature is strongly affected...